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Displaying 951 - 975 of 1845

Bevel Depth Profiling SIMS for Analysis of Layer Structures

September 1, 2003
Author(s)
John G. Gillen, Scott A. Wight, P Chi, Albert J. Fahey, Jennifer R. Verkouteren, Eric S. Windsor, D. B. Fenner
We are evaluating the use of bevel depth profiling Secondary Ion Mass Spectrometry (SIMS) for the characterization of layered semiconductor materials. In this procedure, a sub-degree angle bevel is cut into the analytical sample with an oxygen or cesium

Measurement of Gate-Oxide Film Thickness by X-ray Photoelectron Spectroscopy

September 1, 2003
Author(s)
Cedric J. Powell, Aleksander Jablonski
X-Ray Photoelectron Spectroscopy (XPS) is being used to an increasing extent for the characterization of new gate-oxide materials, particularly for the determination of film composition, uniformity, and thickness. A key parameter for film-thickness

Temperature Metrology and Its Impact on Industry

September 1, 2003
Author(s)
Hratch G. Semerjian, Ellyn S. Beary
Temperature measurement represents one of the most frequently and broadly used measurements, with a majority of products manufactured having temperature measurement devices as an esential component. The accuracy and precision of these temperature

Temperature-Dependent Materials Research with Micromachined Array Platforms

August 1, 2003
Author(s)
Stephen Semancik
This chapter describes the efficiency of studying temperature-dependent materials processing/property/performance relationships with MEMS-based microarrays. Varied types of microsamples (~ 100 m x 100 m in lateral dimension, and of thicknesses between ~ 10
Displaying 951 - 975 of 1845