U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications

NIST Authors in Bold

Displaying 1126 - 1150 of 2122

Enhancing Single-Wall Carbon Nanotube Properties Through Controlled Endohedral Filling

May 10, 2016
Author(s)
Jochen I. Campo, Yanmei Piao, Stephanie Lam, Christopher Stafford, Jason K. Streit, Jeffrey R. Simpson, Angela R. Hight Walker, Jeffrey Fagan
Chemical control of the endohedral volume of single-wall carbon nanotubes (SWCNTs) via liquid-phase filling is demonstrated to be a facile strategy to controllably modify properties of the nanotubes in manners significant for processing and proposed

Bottom-Up Colloidal Crystal Assembly with a Twist

April 28, 2016
Author(s)
Nathan Mahynski, Lorenzo Rovigatti, Christos Likos, Athanassios Panagiotopoulos
Globally ordered colloidal crystal lattices have broad utility in a wide range of optical and catalytic devices, for example, as photonic bandgap materials. However, the self-assembly of stereospecific structures is often confounded by polymorphism. Small

Synchrotron X-Ray Microbeam Diffraction Measurements of Full Elastic Long Range Internal Strain and Stress Tensors in Commercial-Purity Aluminum Processed by Multiple Passes of Equal-Channel Angular Pressing

April 23, 2016
Author(s)
Thien Q. Phan, Lyle E. Levine, I-Fang Lee, Jonathan Z. Tischler, Ruqing Xu, Yi Huang, Terrance G. Langdon, Michael E. Kassner
Synchrotron X-ray microbeam diffraction was used to measure the full elastic long range internal strain and stress tensors of low dislocation density regions within the submicrometer grain/subgrain structure of equal-channel angular pressed (ECAP) AA1050

In-situ Stress Measurements During Cobalt Electrodeposition on (111)-Textured Au

April 14, 2016
Author(s)
Gery R. Stafford, Matthew R. Fayette, Ugo Bertocci
Cantilever curvature was used to examine stress generation during the electrodeposition of Co from 0.1 M NaClO4 + 0.001 M Co(ClO4)2 (pH = 4.8) in films measuring less than 100 nm in thickness. The stress-thickness product showed a -0.2 N/m compression in

Laser Welding of Dual-Phase Galvanized Sheet Steel

March 18, 2016
Author(s)
Stephanie L. Miller, Erik A. Pfeif, Andrei F. Kazakov, Esther Baumann, Marla L. Dowell
Laser welding has many advantages over traditional joining methods, but remains underutilized. NIST has undertaken an initiative to improve predictions of weldability, reliability, and performance of laser welds. This study investigates butt welding of

Chapter 7: Quantitative Assessment of Stress Relaxation in Tin Films by the Formation of Whiskers, Hillocks, and Other Surface Defects

March 15, 2016
Author(s)
Nicholas Clore, Dennis D. Fritz, Wei-Hsun Chen, Maureen E. Williams, John E. Blendell, Carol A. Handwerker
This chapter focuses on a study to develop & validate a surface defect counting procedure to be applied in research on the specific mechanisms responsible for stress relaxation & tin whisker formation in tin films. The current JEDEC standards [1,2] for the

Surface conductance of graphene from non-contact resonant cavity

March 15, 2016
Author(s)
Jan Obrzut, Caglar Dogu Emiroglu, Oleg A. Kirillov, Yanfei Yang, Randolph E. Elmquist
A method is established to reliably determine surface conductance of single-layer or multi-layer atomically thin nano-carbon graphene structures. These can be synthesized by chemical vapor deposition (CVD), epitaxial growth on silicon carbide (SiC)

Data Infrastructure for High Throughput Materials Discovery

March 7, 2016
Author(s)
Erik A. Pfeif, Kenneth G. Kroenlein
Increases in computational capability enabled sophisticated materials design to evolve from trial-and-error approaches towards more informed methodologies that require large amounts of data. Expert designed tools and their underlying databases facilitate

Real-time Photoluminescence Studies of Thin Film Formation in Organic Solar Cells

February 29, 2016
Author(s)
Sebastian Engmann, Felicia A. Bokel, Hyun W. Ro, Dean M. DeLongchamp, Lee J. Richter
We present a method to study the structural evolution of organic bulk-heterojunctions via real-time, in-situ, steady state photoluminescence (PL). In-situ PL, in combination with real-time transmission and reflection measurements, allowed us to

The Structural Origin of Electron Injection Enhancements with Fulleropyrrolidine Interlayers

February 25, 2016
Author(s)
Lee J. Richter, Hyunbok Lee, Christopher McNeil, Eliot Gann, Lars Thomsen, S. Park, J. Jeong, Z. A. Page, Egle Puodziukynaite, Todd Emrick, Alejandro Briseno, John C. Stephenson, Dean M. DeLongchamp
Market demand for ubiquitous, increased functionality products at low cost (the internet of things) is spurring development in additive, solution processing of electronic devices. Performance in thin-film functional devices, be they transistors, diodes, or

Interlaboratory study towards a climate-specific test: spectroscopic characterizations of EVA in glass/EVA/glass systems

February 23, 2016
Author(s)
Jae Hyun Kim, Christopher M. Stafford, Yadong Lyu, Li C. Yu, Chiao-Chi Lin, Tinh Nguyen, Xiaohong Gu
EVA as an encapsulant material is exposed to various UV irradiation, thermal cycles, and humidity conditions. Degradation of EVA can reduce not only power generation due to yellowing, but also a structural integrity of a PV module. In order to investigate

Vertical 2D/3D Semiconductor Heterostructures based on Epitaxial Molybdenum Disulfide and Gallium Nitride

February 19, 2016
Author(s)
Dmitry A. Ruzmetov, Kehao Zhang, Gheorghe Stan, Berc Kalanyan, Ganesh R. Bhimanapati, Sarah M. Eichfeld, R A. Burke, Pankaj B. Shah, Terrance P. O'Regan, Frank J. Crowne, A. Glen Birdwell, Joshua A. Robinson, Albert Davydov, Tony G. Ivanov
When designing semiconductor heterostructures, it is expected that epitaxial alignment will facilitate low-defect interfaces and efficient vertical transport. Here, we report lattice-matched epitaxial growth of molybdenum disulfide (MoSub2) directly on

Assessing Electron Backscattered Diffraction and Confocal Raman Microscopy Strain Mapping Using Wedge-indented Si

February 17, 2016
Author(s)
Lawrence Henry Friedman, Mark D. Vaudin, Stephan J. Stranick, Gheorghe Stan, Yvonne B. Gerbig, William Alexander Osborn, Robert F. Cook
The accuracy of electron backscattered diffraction (EBSD) and confocal Raman microscopy (CRM) for small-scale strain mapping are assessed using the multi-axial strain field surrounding a wedge indentation in Si as a test vehicle. The strain field is
Displaying 1126 - 1150 of 2122