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Displaying 176 - 200 of 655

Broadband Rydberg Atom Based Self-Calibrating RF E-field Probe

August 16, 2014
Author(s)
Christopher L. Holloway, Joshua A. Gordon, Steven R. Jefferts, Thomas P. Heavner
We present a significantly new approach for an electric (E) field probe. The probe is based on the interaction of RF-fields with Rydberg atoms, where alkali atoms are excited optically to Rydberg states and the applied RF-field alters the resonant state of

Characterizing a Device's susceptibility to broadband signals: A case study

August 4, 2014
Author(s)
Jason B. Coder, John M. Ladbury, David Hunter
It is common for electronic devices to be tested for their susceptibility to radiated signals they may be exposed to during their normal operation. A reverberation chamber is well suited to perform this type of testing because it can expose the device

Dielectric characterization by microwave cavity perturbation corrected for non-uniform fields

July 23, 2014
Author(s)
Nathan D. Orloff, Jan Obrzut, Christian J. Long, Thomas F. Lam, James C. Booth, David R. Novotny, James A. Liddle, Pavel Kabos
The non-uniform fields that occur due to the slot in the cavity through which the sample is inserted and those due to the sample geometry itself decrease the accuracy of dielectric characterization by cavity perturbation at microwave frequencies. To

A Prescription for THz Transistor Characterization

April 4, 2014
Author(s)
Dylan F. Williams
Advances in microwave wafer probes and vector network analyzers have opened up a whole new world of discovery in microwave metrology, making possible accurate on-wafer measurements in printed transmission lines at microwave, millimeter-wave, sub-millimeter

Calibrations for Millimeter-Wave Silicon Transistor Characterization

March 1, 2014
Author(s)
Dylan F. Williams, Phillip Corson, Sharma Jahnavi, Krishnaswamy Harish, Wei Tai, George Zacharias, Ricketts David, Watson Paul, Dacquay Eric, Voinigescu Sorin
This paper compares on-wafer thru-reflect-line (TRL) and off-wafer short-open-load-thru (SOLT) and line-reflect-reflect-match (LRRM) vector-network-analyzer probe-tip calibrations for amplifier characterization and parasitic-extraction calibrations for

Designing High-Performance PbS and PbSe Nanocrystal Electronic Devices through Stepwise, Post-Synthesis, Colloidal Atomic Layer Deposition

February 6, 2014
Author(s)
Soong Ju Oh, Nathaniel E. Berry, Hi-Hyuk Choi, E. A. Gaulding, Hangfei Lin, Taejong Paik, Benjamin T. Diroll, Shinichiro Muramoto, Murray B. Christopher, Cherie R. Kagan
We report a facile, solution based, post synthetic colloidal atomic layer deposition (PS-cALD) process to engineer the surface stoichiometry and therefore electronic properties of lead chalcogenide nanocrystal (NC) thin films. Using the stepwise and

A four-pixel single-photon pulse-position array fabricated from WSi superconducting nanowire single- photon detectors

February 3, 2014
Author(s)
Varun B. Verma, Robert D. Horansky, Francesco Marsili, Jeffrey Stern, Matthew Shaw, Adriana E. Lita, Richard P. Mirin, Sae Woo Nam
We demonstrate a scalable readout scheme for an infrared single-photon pulse-position camera consisting of WSi superconducting nanowire single-photon detectors. For an N × N array, only 2 × N wires are required to obtain the position of a detection event

Tunable electrical conductivity in metal-organic framework thin film devices

January 3, 2014
Author(s)
Albert A. Talin, Andrea Centrone, Alexandra C. Ford, Michael E. Foster, Vitalie Stavila, Paul M. Haney, Robert A. Kinney, Veronika Szalai, Farid El Gabaly, Heayoung Yoon, Francois Leonard, Mark Allendorf
We report a strategy for realizing tunable electrical conductivity in MOFs in which the nanopores are infiltrated with redox-active, conjugated guest molecules. This approach is demonstrated using thin-film devices of the MOF Cu3(BTC)2 (also known as HKUST

10 TOhm and 100 TOhm High Resistance Measurements at NIST

September 25, 2013
Author(s)
Dean G. Jarrett, Marlin E. Kraft
The measurement techniques, standards, and bridges used to calibrate standard resistors in the 10 TΩ to 100TΩ range at NIST are described. Standard resistors, guarded Hamon transfer standard, and 10:1 and 100:1 bridge ratios, were used to provide multiple

On the Link Between Insertion Loss and Lower Bound of Efficiency

August 9, 2013
Author(s)
Levon Barsikyan, Jason Coder, Mark Golkowski, John M. Ladbury
We investigate the effect of chamber loss on the recently developed 2-port antenna model and the associated method of determining antenna efficiency. The loss in the reverberation chamber was controlled using microwave absorbing foam creating four

Traceability for Aerosol Electrometer in the fA Range

June 1, 2013
Author(s)
Dean G. Jarrett, Miles Owen
Described here are the configurations and procedures used to provide traceability to electrical standards for an aerosol electrometer calibration in the range ± 20 fA to ± 40 fA. The technique used here simulated the condition of a current induced when

The Forthcoming IEEE Standard 1696 on Test Methods for Characterizing Circuit Probes

May 6, 2013
Author(s)
Nicholas Paulter, John Jendzurski, Mike McTigue, Bill Hagerup, Thomas E. Linnenbrink
The Technical Committee 10 (TC10) of the IEEE Instrumentation and Measurement Society initiated a new standards activity in 2006 for the development of test methods to characterize the performance of circuit probes. This standard contains a set of

Graphene as Transparent Electrode for Direct Observation of Hole Photoemission from Silicon to Oxide

March 27, 2013
Author(s)
Rusen Yan, Qin Zhang, Oleg A. Kirillov, Wei Li, James I. Basham, Alexander G. Boosalis, Xuelei X. Liang, Debdeep Jena, Curt A. Richter, Alan C. Seabaugh, David J. Gundlach, Huili G. Xing, Nhan V. Nguyen
The outstanding electrical and optical properties of graphene make it an excellent alternative as a transparent electrode. Here we demonstrate the application of graphene as collector material in internal photoemission (IPE) spectroscopy; enabling the

Organosilicate Polymer E-Beam Resists with High Resolution, Sensitivity and Stability

February 28, 2013
Author(s)
Christopher Soles, Richard Kasica, Hae-Jeong Lee, Jae H. Sim, Sung-Il Lee, Ki-Bum Kim, Hyun-Mi Kim, Do Y. Yoon
Hydrogen silsesquioxane (HSQ) is an attractive electron-beam (e-beam) resist for sub-20 nm lithography due to its high resolution, excellent line-edge-roughness (LER), and good plasma etch resistance. However, the sensitivity and long-term stability of HSQ

Nonlinear acoustic effects in multilayer ceramic capacitors

January 25, 2013
Author(s)
Ward L. Johnson, Sudook A. Kim, Timothy P. Quinn, Grady S. White
Nonlinear resonant acoustics was explored as an approach for nondestructively evaluating the susceptibility of BaTiO3-based multilayer ceramic capacitors to electrical failure during service. The acoustic nonlinearity was characterized through measurements
Displaying 176 - 200 of 655