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Displaying 176 - 200 of 718

Bonded Wafers for Three-Dimensional Integration

March 2, 2017
Author(s)
Richard A. Allen
Three-dimensional (3D) integration is a key enabling technology for compact, high-performance, and/or low-power electronics. This technology enables the fabrication of circuits with functions that commonly cannot be fabricated on a single substrate in a

Coupled Bilayer Photonic Crystal Slab Electro-Optic Spatial Light Modulators

March 1, 2017
Author(s)
Yichen Shuai, Deyin Zhao, Corey A. Stambaugh, John R. Lawall, Weidong Zhou, Yonghao Liu
We demonstrate here a surface-normal ultracompact Fano resonance electrooptic spatial light modulator employing a stacked photonic crystal membrane capacitor-like structure. Vertically coupled optical resonance near 1.5 μm was observed, and both blue and

Characteristics of Resistive Memory Read Fluctuations in Endurance Cycling

January 23, 2017
Author(s)
David M. Nminibapiel, Dmitry Veksler, Pragya R. Shrestha, Jihong Kim, Jason P. Campbell, Jason T. Ryan, Helmut Baumgart, Kin P. Cheung
We report on new fluctuation dynamics of the high resistance state of Hafnia-based RRAM devices after RESET. We observe that large amplitude fluctuations occur more frequently immediately after programming and their frequency of occurrence decays in the

Structure and Order in Organic Semiconductors

January 17, 2017
Author(s)
Chad R. Snyder, Dean M. DeLongchamp, Ryan C. Nieuwendaal, Andrew A. Herzing
Several techniques for characterizing semiconducting polymer order on different length scales are presented, including (1) differential scanning calorimetry (DSC), (2) solid state nuclear magnetic resonance spectroscopy (NMR), (3) transmission electron

Advances in RRAM technology: identifying and mitigating roadblocks

January 13, 2017
Author(s)
Dmitry Veksler, Gennadi Bersuker
The filament-based RRAM has demonstrated superior scalability, endurance, low power operation, retention, and operating speed. A challenge navigating trade-offs between high density, low switching power, and stability can be addressed by capitalizing on

InGaAs Inversion Layer Mobility and Interface Trap Density from Gated Hall Measurements

December 12, 2016
Author(s)
Thenappan Chidambaram, Dmitry Veksler, S Madisetti, Michael Yakimov, Vadim Tokranov, Serge Oktyabrskiy
In this work, we use gated Hall method for direct measurement of free carrier density and electron mobility in inversion InGaAs MOSFET channels. At room temperature, the highest Hall mobility of 1800 cm2/Vs is observed at electron density in the channel

Atomically precise device fabrication

December 7, 2016
Author(s)
Joseph A. Hagmann, Xiqiao Wang, Pradeep N. Namboodiri, Richard M. Silver, Curt A. Richter
An improved capacity to control matter at the atomic scale is central to the advancement of nanotechnology. The complementary metal-oxide-semiconductor (CMOS) devices that power existing computing technology, which continue to scale down in size as

Comparison of CBED and ABF Atomic Imaging for GaN Polarity Determination

November 8, 2016
Author(s)
Alexana Roshko, Matthew D. Brubaker, Paul T. Blanchard, Kristine A. Bertness, Todd E. Harvey, Igor Levin, R.H. Geiss
A comparison of two electron microscopy techniques used to determine the polarity of GaN nanowires is presented. The techniques are convergent beam electron diffraction (CBED) in TEM mode and annular bright field (ABF) imaging in aberration corrected STEM

Calibration of Effective Tunneling Bandgap in GaAsSb/InGaAs for improved TFET Performance Prediction

November 3, 2016
Author(s)
Quentin Smets, Anne S. Verhulst, Salim El Kazzi, David J. Gundlach, Curt A. Richter, Anda Mocuta, Nadine Collaert, Aaron Thean, Marc Heyns
The effective bandgap for heterojunction band-to-band tunneling (Eg,eff) is a crucial design parameter for heterojunction TFET. However, there is significant uncertainty on Eg,eff, especially for In0.53Ga0.47As/GaAs0.5Sb0.5. This makes TFET performance

The Role of Measurement Uncertainty in Achieving First-Pass Design Success

October 22, 2016
Author(s)
Dylan Williams, Richard Chamberlin, Wei Zhao, Jerome Cheron, Urteaga Miguel
We investigate the role of measurement uncertainty in achieving first-pass design success at microwave frequencies. We develop a model for state-of-the-art 250 nm heterojunction bipolar transistors, and demonstrate the propagation of correlated measurement

FINE-TUNING ELECTRICAL FLOW RATE SENSING IN DEFORMABLE CHANNELS

October 9, 2016
Author(s)
Pengfei Niu, Brian J. Nablo, Kiran Bhadriraju, Darwin Reyes-Hernandez
Here we present conclusive proof that when using electrical impedance to measure volumetric flow rate in polydimethylsiloxane (PDMS) microchannels a considerable fraction of the change in impedance, due to change in flow rate, is caused by the variation in

Rapid and Accurate C-V Measurements

October 1, 2016
Author(s)
Jihong Kim, Pragya Shrestha, Jason Campbell, Jason Ryan, David M. Nminibapiel, Joseph Kopanski, Kin P. Cheung
We report a new technique for the rapid measurement of full capacitance-voltage (C-V) characteristic curves. The displacement current from a 100 MHz applied sine-wave, which swings from accumulation to strong inversion, is digitized directly using an

Polymorphism in the 1:1 Charge-Transfer Complex DBTTF-TCNQ and Its Effects on Optical and Electronic Properties

September 14, 2016
Author(s)
Katelyn Goetz, Jun?ya Tsutsumi, Sujitra Pookpanratana, Jihua Chen, Curt A. Richter, Christina Hacker, Tatsuo Hasegawa, Oana Jurchescu
The organic charge-transfer (CT) complex dibenzotetrathiafulvalene - 7,7,8,8-tetracyanoquinodimethane (DBTTF-TCNQ) is found to crystallize in two polymorphs when grown by physical vapor transport: the known α-polymorph and a new structure, the β-polymorph
Displaying 176 - 200 of 718