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Displaying 2251 - 2275 of 2609
Since 1994 a bank of four 10 pF oil-bath type fused-silica dielectric capacitors has been maintained in the NIST Impedance Calibration Laboratory for use as reference standards to assign values to the secondary reference and check standards used for
Dimensional measurements of importance to microlithography include feature sizes and feature placement on photomasks and wafers, overlay eccentricities, defect and particle sizes on masks and wafers, and many others. A common element is that the object
Richard M. Silver, Carsten P. Jensen, V W. Tsai, Joseph Fu, John S. Villarrubia, E C. Teague
We are developing the instrumentation and prototype samples at NIST to enable the counting of atom-spacings across linewidth features etched in silicon. This is an effort to allow the accurate counting of atom-spacings across a feature in a controlled
Ronald G. Dixson, R Koning, Theodore V. Vorburger, Joseph Fu, V W. Tsai
Because atomic force microscopes (AFMs) are capable of generating three dimensional images with nanometer level resolution, these instruments are being increasingly used in many industries as tools for dimensional metrology at sub- micrometer length scales
The U.S. Federal Government has a strong role in metrology R&D in the U.S because of its importance to the nation's economy and the Constitutional authority given to the National Institute of Standards and Technology (NIST). However, pressures to maintain
In scanned probe microscopy, it is necessary to know the tip's geometry in order to correct image distortions due to its finite size. Heretofore, methods have focused upon determining the tip shape by erosion of a tip characterizer of known geometry from
J Allgair, C Archie, W Banke, H Bogardus, J Griffith, H Marchman, Michael T. Postek, L Saraf, J Schlesinger, B Singh, N. Sullivan, L Trimble, Andras Vladar, A Yanof
The stringent critical dimension (CD) control requirements in cutting edge device facilities have placed significant demands on metrologists and upon the tools they use. We are developing a unified, advanced critical dimension scanning electron microscope
This document describes the capacitance calibration service provided by NIST, including measurement procedures and systems used to calibrate capacitance standards of nominal values in the range of 0.001 pF to 1 F, at frequencies up to 10 kHz. Discussed are
The National Institute of Standards and Technology, in conjunction with the Measurement Science Conference, conducted an industry-needs workshop on February 4, 1998, on issues with U.S. manufacturing companies, particularly smaller ones, may have in
Steven D. Phillips, Bruce R. Borchardt, William T. Estler, J Buttress
This paper examines the measurement uncertainty of small circular features as a function of the sampling strategy; i.e., the number and distribution of measurement points. Specifically, we examine measuring a circular feature using a three-point sampling
Beginning on or about April 1, 1997, the National Institute of Standards and Technology (NIST) received partial support from SEMATECH to collaborate in a program designated 1997-1998 NIST/SEMATECH Collaboration for Improvement of High-Accuracy Critical
This paper reports the results of the finite element analysis and in-situ testing of a large-scale (4 m x 10 m) pneumatically isolated concrete slab are reported. The slab was constructed as a design prototype for next generation metrology laboratories at
H Edwards, J Jorgensen, John A. Dagata, Y Strausser, J Schneir
We report a study of a fundamental limit to the accuracy of vertical measurements made using scanning-probe microscopes (SPM): the short-term stability of a vertical calibration using a waffle-pattern artifact. To test the instrumental component of this
Egon Marx, I J. Malik, Y Strausser, T Bristow, N Poduje, J C. Stover
Power spectral densities (PSDs) were used to characterize a set of surfaces over a wide range of lateral as well as perpendicular dimensions. Twelve 200-mm-diameter Si wafers were prepared and the surface finishes ranged from as-ground wafers to epitaxial
Samuel Dongmo, John S. Villarrubia, Samuel N. Jones, Thomas B. Renegar, Michael T. Postek, Jun-Feng Song
Determination of the tip shape is an important prerequisite for converting the various scanning probe microscopies form imaging tools into dimensional metrology tools with sufficient accuracy to meet the critical dimension measurement requirements of the
We analyze two types of full-circle angle calibrations: a simple closure in which a single set of unknown angular segments is sequentially compared with an unknown reference angle, and a dual closure in which two divided circles are simultaneously
The NIST automated Multifunction Calibration System (MCS) for voltage, current, and resistance is described. Developed primarily to calibrate digital multimeters and calibrators, the system can also be used to test thermal converters, and
The use of the atomic force microscope (AFM) to characterize surface structures for industrial applications is rapidly increasing. To compare the results obtained by different instruments and to achieve high accuracy, the scales of an AFM must be
K Matsumoto, Y Gotoh, T Maeda, John A. Dagata, J S. Harris
Coulomb oscillation was clearly observed at room temperature in the single electron transistor fabricated by atomic force microscopy (AFM) nano-oxidation process. In order to obtain a clear Coulomb oscillation at room temperature, new and improved
Jun-Feng Song, Samuel R. Low III, David J. Pitchure, Theodore V. Vorburger
Recent developments in standard hardness machines and microform calibration techniques have made it possible to establish a worldwide unified Rockwell hardness scale with metrological traceability. This includes the establishments of the reference