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Search Publications by: Richard A. Allen (Fed)

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Displaying 76 - 100 of 269

Experimental and Simulation Studies of Resistivity of Nanoscale Copper Films

February 19, 2009
Author(s)
Emre Yarimbiyik, Harry A. Schafft, Richard A. Allen, Mark D. Vaudin, Mona E. Zaghloul
The effect of film thickness on the resistivity of thin, evaporated copper films (approximately 10 nm to 150 nm thick) was determined from sheet resistance, film thickness, and mean grain-size measurements by using four-point probe, profilometer, and

A Standard Method for Measuring Wafer Bond Strength for MEMS Applications

December 23, 2008
Author(s)
Richard A. Allen, Janet M. Cassard, Winthrop A. Baylies, David T. Read, George D. Quinn, Frank W. DelRio, Kevin T. Turner, Michael Bernasch, Joerg Bagdahn
A round robin, to provide precision and bias data for SEMI standard MS5-1107, Test Method for Wafer Bond Strength Measurements Using Micro-Chevron Test Structures, in underway. The precision and bias data, combined with experience in applying the test

2nd Annual Tri-National Workshop on Standards for Nanotechnology - (NIST presentations)

December 10, 2008
Author(s)
Ronald G. Dixson, Jon R. Pratt, Vincent A. Hackley, James E. Potzick, Richard A. Allen, Ndubuisi G. Orji, Michael T. Postek, Herbert S. Bennett, Theodore V. Vorburger, Jeffrey A. Fagan, Robert L. Watters
A new era of cooperation between North American National Measurement Institutes (NMIs) was ushered by the National Research Council of Canada Institute for National Measurement Standards (NRC-INMS) on February 7, 2007 when the first Tri-National workshop

Extraction of Sheet Resistance and Line Width from All-Copper ECD Test Structures Fabricated from Silicon Preforms

November 3, 2008
Author(s)
Byron J. Shulver, Andrew S. Bunting, Alan Gundlach, Les I. Haworth, Alan W. Ross, Stewart Smith, Anthony J. Snell, J. T. Stevenson, Anthony Walton, Richard A. Allen, Michael W. Cresswell
Test structures have been fabricated to allow Electrical Critical Dimensions (ECD) to be extracted from copper features with dimensions comparable to those replicated in IC interconnect systems. The implementation of these structures is such that no

Comparison of SEM and HRTEM CD Measurements Extracted from Test-Structures Having Feature Linewidths from 40 nm to 240 nm

January 1, 2008
Author(s)
Michael W. Cresswell, Richard A. Allen, William F. Guthrie, Christine E. Murabito, Ronald G. Dixson, Amy Hunt
CD (Critical Diminsion) measurements have been extracted from SEM (Scanning Electron Microscopy) and HRTEM (High Resolution Transmission Electron Microscopy) images of the same set of monocrystalline silicon features having linewidths between 40 nm and 240

Nano- and Atomic-Scale Length Metrology

December 14, 2007
Author(s)
Theodore V. Vorburger, Ronald G. Dixson, Joseph Fu, Ndubuisi G. Orji, Shaw C. Feng, Michael W. Cresswell, Richard A. Allen, William F. Guthrie, Wei Chu

Fabrication and Characterization of Patterned Single-Crystal Silicon Nanolines

December 7, 2007
Author(s)
Bin Li, Min K. Kang, Kuan Lu, Rui Huang, Paul S. Ho, Richard A. Allen, Michael W. Cresswell
This letter demonstrates a method to fabricate single-crystal Si nanolines, with a rectangular cross section and atomically flat sidewalls. The high quality of these nanolines leads to superb mechanical properties, with the strain to fracture estimated by

Photomask Applications of Traceable Atomic Force Microscope Dimensional Metrology at NIST

October 1, 2007
Author(s)
Ronald G. Dixson, Ndubuisi G. Orji, James E. Potzick, Joseph Fu, Michael W. Cresswell, Richard A. Allen, S J. Smith, Anthony J. Walton
The National Institute of Standards and Technology (NIST) has a multifaceted program in AFM dimensional metrology. Two major instruments are being used for traceable measurements. The first is a custom in-house metrology AFM, called the calibrated AFM (C

CD Reference Materials Fabricated on Monolithic 200 mm Wafers for Automated Metrology Tool Applications

September 30, 2007
Author(s)
Richard A. Allen, Ronald G. Dixson, Michael W. Cresswell, William Gutherie, Byron J. Shulver, Andrew S. Bunting, J. T. Stevenson, Anthony Walton
Recently, prototype isolated-line, single-crystal CD reference materials (SCCDRMs) with linewidths as narrow as 40 nm ? 1.5 nm have been reported. These reference materials, designated NIST Reference Material (RM) 8111 were configured as a 10 mm by 11 mm

Modeling and Analysis of Scatterometry Signatures for Optical Critical Dimension Reference Material Applications

May 7, 2007
Author(s)
Heather J. Patrick, Thomas A. Germer, Michael W. Cresswell, Richard A. Allen, Ronald G. Dixson, Michael R. Bishop
We use an optical critical dimension technique, matching modeled to measured scatterometry signatures, to obtain critical dimension linewidth on grating targets fabricated using the single-crystal critical dimension reference materials process. The targets