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Search Publications by: Mark D. Vaudin (Assoc)

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Displaying 26 - 50 of 184

Phase Relations in Ba-(Nd,Eu,Gd)-Cu-O Coated Conductor Films

February 19, 2017
Author(s)
Winnie Wong-Ng, Igor Levin, Joseph J. Ritter, Lawrence P. Cook, Guangyao Liu, Makoto Otani, Christopher E. Lucas, Shailee P. Diwanji, Ron Feenstra, P Goyal, Mark D. Vaudin
Knowledge of phase relations in thin films of Ba2RCu3O6+x (where R=lanthanides or mixed lanthanides) is needed to guide the processing of coated conductors. High-temperature X-ray diffraction studies of Ba2RCu3O6+x films deposited using the

Rapid Detection of Thin-Film Interfacial Reactions by MEMS-DSC

February 19, 2017
Author(s)
Lawrence P. Cook, Richard E. Cavicchi, Yanbao Zhang, Mark D. Vaudin, Christopher B. Montgomery, William F. Egelhoff Jr., Martin L. Green, Leslie Allen
A MEMS-based differential scanning calorimeter (DSC) has been used to characterize the Ni/Si interfacial reaction in thin films at ramp rates of 940 C/s and 3760 C/s. The DSC devices were fabricated using CMOS semiconductor processing technology, and were

Assessing Electron Backscattered Diffraction and Confocal Raman Microscopy Strain Mapping Using Wedge-indented Si

February 17, 2016
Author(s)
Lawrence Henry Friedman, Mark D. Vaudin, Stephan J. Stranick, Gheorghe Stan, Yvonne B. Gerbig, William Alexander Osborn, Robert F. Cook
The accuracy of electron backscattered diffraction (EBSD) and confocal Raman microscopy (CRM) for small-scale strain mapping are assessed using the multi-axial strain field surrounding a wedge indentation in Si as a test vehicle. The strain field is

Designing a standard for strain mapping: HR-EBSD analysis of SiGe thin film structures on Si

January 1, 2015
Author(s)
Mark D. Vaudin, William A. Osborn, Lawrence H. Friedman, Justin M. Gorham, Robert F. Cook, Victor Vartanian
Patterned SiGe thin film structures, heteroepitaxially deposited on Si substrates, are investigated as potential reference standards to establish the accuracy of high resolution electron backscattered diffraction (HR-EBSD) strain measurement methods. The

Structural and Dynamical Studies of Acid Mediated Conversion in Amorphous-Calcium-Phosphate Based Dental Composites

October 31, 2014
Author(s)
Fan Zhang, Andrew Allen, Lyle E. Levine, Mark D. Vaudin, Drago Skrtic, Joseph M. Antonucci, Kathleen Hoffman, Anthony A. Giuseppetti, Jan Ilavsky
Amorphous calcium phosphate (ACP) based composites are promising restorative dental materials attributable to ACP's capacity to release calcium and phosphate ions through a complex reaction in which ACP is converted to its crystalline, apatitic form

Effect of Tin Doping on alpha-Fe2O3 Photoanodes for Water Splitting

June 28, 2012
Author(s)
Christopher C. Bohn, Amit Agrawal, Erich C. Walter, Mark D. Vaudin, Andrew Herzing, Paul M. Haney, Albert A. Talin, Veronika Szalai
Sputtered-deposited films of α-Fe2O3 of thickness 600 nm were investigated as photoanodes for solar water splitting and found to have photocurrents as high as 0.8 mA/cm2 at 1.23 V vs. the reversible hydrogen electrode (RHE). The incorporation of Sn into

Micro-scale measurement and modeling of stress in silicon surrounding a tungsten-filled through-silicon via

October 11, 2011
Author(s)
Ryan P. Koseski, William Alexander Osborn, Stephan J. Stranick, Frank W. DelRio, Mark D. Vaudin, Thuy Dao, Vance H. Adams, Robert F. Cook
The stress in silicon surrounding a tungsten-filled through-silicon via (TSV) is measured using confocal Raman microscopy line scans across the TSV both before and after etch removal of an oxide stack used as a mask to define the TSV during fabrication

Enhanced Mass Transport in Ultra-Rapidly-Heated Ni/Si Thin-Film Multilayers

November 15, 2009
Author(s)
Lawrence P. Cook, Richard E. Cavicchi, Nabil Bassim, Susie Eustis, Winnie Wong-Ng, Igor Levin, Ursula R. Kattner, Carelyn E. Campbell, Christopher B. Montgomery, William F. Egelhoff Jr., Mark D. Vaudin
We have investigated multilayer and bilayer Ni/Si thin films by nano-differential scanning calorimetry (DSC) at ultra rapid scan rates, in a temperature-time regime not accessible with conventional apparatus. DSC experiments were completed at slower scan

Measurement of heat capacity and enthalpy of formation of Nickel Silicide using Nano-calorimetry

November 2, 2009
Author(s)
Ravi Kummamuru, Lito De La Rama, Liang Hu, Mark D. Vaudin, Mikhail Efremov, Martin L. Green, David A. LaVan, Leslie Allen
We present characterization of energetics of the reaction between nickel and silicon thin films using differential scanning nano-calorimetry (nano-DSC). For the first time, nano-DSC measurements up to 850 °C and of enthalpy of thin film reactions have been