Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by: Mark D. Vaudin (Assoc)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 51 - 75 of 184

Experimental and Simulation Studies of Resistivity of Nanoscale Copper Films

February 19, 2009
Author(s)
Emre Yarimbiyik, Harry A. Schafft, Richard A. Allen, Mark D. Vaudin, Mona E. Zaghloul
The effect of film thickness on the resistivity of thin, evaporated copper films (approximately 10 nm to 150 nm thick) was determined from sheet resistance, film thickness, and mean grain-size measurements by using four-point probe, profilometer, and

Structural and thermoelectric properties of Bi2Sr2Co2Oy thin films on LaAlO3 (100) and fused silica substrates

January 12, 2009
Author(s)
Winnie K. Wong-Ng, Mark D. Vaudin, Shufang Wang, L Venimadhav, Shengming Guo, Ke Chen, Qi Li, A Soukiassian, D.G. Schlom, X.Q. Pan, D.G. Cahill, X. X. Xi
We have grown Bi2Sr2Co2Oy thin films on LaAlO3 (100) and fused silica substrates by pulsed laser deposition. The films on LaAlO3 are c-axis oriented and partially in-plane aligned with multiple domains while the films on fused silica are preferred c-axis

Measurement of Axisymmetric Crystallographic Texture

January 1, 2009
Author(s)
Mark D. Vaudin
Crystallographic texture has for many years been the fiefdom of metallurgists and geologists, who have developed elegant methodologies for the analysis of highly complex textures and texture evolutions. Over the past two decades, the importance and

Diameter Dependent Transport Properties of GaN Nanowire Field Effect Transistors

October 16, 2008
Author(s)
Abhishek Motayed, Mark D. Vaudin, Albert Davydov, John Meingailis, Maoqi He, S N. Mohammad
We report transport properties measurements of individual GaN nanowire field effect transistors and the correlation of the electron mobilities with the existence of grain boundaries in these nanowires. These nanowires are grown by direct reaction of NH3

Electrodeposited Epitaxial Fe Subscript 100-x}Co Subscript x} Films on GaAs

October 16, 2008
Author(s)
J Mallett, Erik B. Svedberg, Mark D. Vaudin, Leonid A. Bendersky, William F. Egelhoff Jr., Thomas P. Moffat
The electrodeposition of epitaxial cube-on-cube Fe _(subscript) 100-x}Co_(subscript) x} films onto n-GaAs is described from ferrous ammonium sulfate solutions containing various concentrations of cobalt sulfate. The cobalt composition in a series of 400nm

Surface Effects on the Elastic Modulus of Te Nanowires

June 17, 2008
Author(s)
Gheorghe Stan, Sergiy Krylyuk, Albert Davydov, Mark D. Vaudin, Leonid A. Bendersky, Robert F. Cook
Nondestructive elastic property measurements have been performed on Te nanowires with diameters in the range 20 150 nm. By using contact resonance atomic force microscopy, the elastic indentation modulus perpendicular to the prismatic facets of the

Equi-Axed Grain Formation in Electrodeposited Sn-Bi

December 29, 2007
Author(s)
E Sandnes, Maureen E. Williams, Mark D. Vaudin, Gery R. Stafford
Sn is widely used as a coating in the electronics industry because it provides excellent solderability, ductility, electrical conductivity and corrosion resistance. However, Sn whiskers have been observed to grow spontaneously from Sn electrodeposits and