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Search Publications by: Mark D. Vaudin (Assoc)

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Displaying 101 - 125 of 184

Texture Measurements in Fiber-Oriented PMN-PT

April 9, 2006
Author(s)
Kristen H. Brosnan, G L. Messing, Richard J. Meyer, Mark D. Vaudin
Textured (1-x)(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT) ceramics obtained by the templated grain growth (TGG) process a significant fraction of the piezoelectric properties of the Bridgman growth single crystals at a fraction of the cost. These materials could have

High Degree of Crystalline Perfection in Spontaneously Grown GaN Nanowires

January 1, 2006
Author(s)
Kristine A. Bertness, Alexana Roshko, Albert Davydov, Igor Levin, Mark D. Vaudin, Joy Barker, John B. Schlager, Norman Sanford, Larry Robins
We have grown a variety of isolated GaN nanowires using gas-source molecular beam epitaxy (MBE) and characterized their structural and optical properties. The nanowires have demonstrated a number of promising materials characteristics, including low defect

Composition and Carrier Concentration Dependence of the Electronic Structure of InyGa1-yAs1-xNx Films With Nitrogen Mole Fraction Less Than 0.012

November 1, 2005
Author(s)
Youn S. Kang, Lawrence H. Robins, Anthony Birdwell, Alexander J. Shapiro, W. R. Thurber, Mark D. Vaudin, M M. Fahmi, D Bryson, S N. Mohammad
The electronic structure of Si-doped InyGa1-yAs1-xNx films on GaAs substrates, grown bynitrogen-plasma-assisted molecular-beam epitaxy, was examined by photoreflectance PR spectroscopy at temperatures between 20 and 300 K. The films were approximately 0.5

Photoreflectance Study of the Electronic Structure of Si-Doped InyGa 1-y As 1-x N x Films With x 0.012

March 1, 2005
Author(s)
Youn S. Kang, Lawrence H. Robins, Anthony Birdwell, Alexander J. Shapiro, W. R. Thurber, Mark D. Vaudin, M M. Fahmi, D Bryson, S N. Mohammad
The electronic structure of Si-doped InyGa1-yAs1-xNx films on GaAs substrates, grown by nitrogen-plasma-assisted MBE, was examined by photoreflectance (PR) spectroscopy at temperatures between20 K and 300 K. The measured critical-point energies were

Horizontal Growth and In Situ Assembly of Oriented Zinc Oxide Nanowires

October 1, 2004
Author(s)
Babak Nikoobakht, Chris A. Michaels, Stephan J. Stranick, Mark D. Vaudin
The positioning and directed assembly of semiconductor nanowires (NWs) is of considerable current interest for bottom-up approaches to the engineering of intricate structures from nanoscale building blocks. We report a horizontal growth mode for ZnO NWs on