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Search Publications by: Daniel Josell (Fed)

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Displaying 126 - 150 of 273

Three-Dimensionally Structured CdTe Thin Film Photovoltaic Devices with Self-Aligned Back Contacts: Electrodeposition on Interdigitated Electrodes.

June 25, 2009
Author(s)
Daniel Josell, Carlos R. Beauchamp, Suyong S. Jung, Behrang H. Hamadani, Abhishek Motayed, Lee J. Richter, Maureen E. Williams, John E. Bonevich, Alexander J. Shapiro, Nikolai B. Zhitenev, Thomas P. Moffat
Cadmium-telluride photovoltaic cells were deposited on substrates patterned with two interdigitated electrodes. Deposition involved application of different potentials to the two electrodes in order to obtain a 3-d gradient of film properties within the

Infrared emission imaging as a tool for characterization of hydrogen storage materials

December 6, 2008
Author(s)
H. Oguchi, Edwin J. Heilweil, Daniel Josell, Leonid A. Bendersky
Combinatorial thin films provide an opportunity for studying a variety of properties over a wide range of compositions and microstructures on a single substrate, allowing substantial acceleration of both the fabrication and study of materials and their

Control of Overfill Bumps in Damascene Cu Electrodeposition

October 16, 2008
Author(s)
Soo K. Kim, Daniel Wheeler, Daniel Josell, Thomas P. Moffat
Electroanalytical measurements and feature filling experiments have been conducted to study the effect of dodecyltrimethylammonium chloride (DTAC) and branched polyethyleneimine (PEI) on Cu deposition as levelers in the presence of various combinations of

Diffusional Creep: Stresses and Strain Rates in Thin films and Multilayers

October 16, 2008
Author(s)
Daniel Josell, Timothy P. Weihs, H Gao
In this article, we discuss creep deformation as it relates to thin films and multilayer foils. We begin by reviewing experimental techniques for studying creep deformation in thin-film geometries, listing the pros and cons of each; then we discuss the use

Examination of Sn Electrodeposit on a Substrate Not Forming Intermetallic

October 16, 2008
Author(s)
Maureen E. Williams, Kil-Won Moon, William J. Boettinger, Daniel Josell
Intermetallic compound (IMC) formation at the interface between the tin (Sn) plating and the copper (Cu) substrate of electronic components has been thought to produce compressive stress in Sn electrodeposits and cause the growth of Sn whiskers. To

Interfacial Free Energies and the Creep of Multilayer Thin Films

October 16, 2008
Author(s)
Daniel Josell, W Carter
Experiments utilizing the creep properties of multilayer thin films to determine underlying free energies are presented with essential theory. A new technique utilizing tubular multilayer foils is then described.

Surfaces, Interfaces, and Changing Shapes

October 16, 2008
Author(s)
Daniel Josell, F Spaepen
It is generally recognized that the capillary forces associated with internal and external interfaces affect both the shapes of liquid-vapor surfaces and wetting of a solid by a liquid. It is less commonly understood that the same phenomenology often

Dependence of Exchange Coupling Interaction on Micromagnetic Constants in Hard/Soft Magnetic Bilayer Systems

September 1, 2007
Author(s)
Antonio Zambano, Hiroyuki Oguchi, Ichiro Takeuchi, Y W. Choi, J.S. Jiang, J P. Liu, S E. Lofland, Daniel Josell, Leonid A. Bendersky
To elucidate the dependence of exchange coupling behavior of hard/soft magnetic bilayer systems on various micromagnetic constants, the coupling length and the nucleation field (H (superscript_N)) were systematically measured on five thin film libraries

Electrodeposition of Ni in Sub-Micrometer Trenches

July 2, 2007
Author(s)
S D. Kim, John E. Bonevich, Daniel Josell, Thomas P. Moffat
A survey of the effect of cationic, anionic and non-ionic surfactants on the rate and morphological evolution of nickel electrodeposition from a Watts-type bath is presented. Particular attention is given to the prospect for void free filling of sub

Superfilling When Adsorbed Accelerators Are Mobile

February 6, 2007
Author(s)
Daniel Josell, Thomas P. Moffat, Daniel Wheeler
Bottom-up superfill during electrodeposition that is used for industrial processing of damascene copper interconnects has also been demonstrated during electrodeposition of silver and gold. The Curvature Enhanced Accelerator Coverage (CEAC) mechanism has