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Search Publications by: Eric K. Lin (Fed)

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Displaying 101 - 125 of 199

Substrate Influence on Moisture Absorption Into Thin Poly(vinyl pyrrolidone) Films

January 1, 2005
Author(s)
B D. Vogt, Christopher L. Soles, Hae-Jeong Lee, Eric K. Lin, Wen-Li Wu
The influence of substrate surface energy on the swelling of poly(vinyl pyrrolidone) (PVP) films was examined using x-ray reflectivity (XR) and quartz crystal microbalance (QCM) measurements. Two different silicon surface treatments were used for the PVP

Formation of Deprotected Fuzzy Blobs in Chemically Amplified Resists

September 1, 2004
Author(s)
Ronald L. Jones, C G. Willson, T Hu, Eric K. Lin, Wen-Li Wu, D L. Goldfarb, M Angelopoulos, B C. Trinque, G M. Schmidt, M D. Stewart
The requirement of nanometer dimensional control in photolithographic patterning underlies the future of emerging technologies including next generation semiconductors, nanofluidics, photonics, and microelectronic machines (MEMs). Dimensional control is

Proton NMR Determination of Miscibility in a Bulk Model Photoresist System Poly (4-Hydroxystyene) and the Photoacid Generator, Di(t-butylphenyl) Iodonium Perfluorooctane Sulfonate

July 13, 2004
Author(s)
David L. VanderHart, Vivek M. Prabhu, Eric K. Lin
The intimacy of component mixing in 2 blends of poly(4-hydroxystyrene) (PHS) and a photoacid generator (PAG), di(t-butylphenyl) iodonium perfluorooctane sulfonate (PFOS) were studied by solid state proton NMR. Mass ratios were 91/9 and 85/15 PHS/PFOS

Correlation of the Reaction Front With Roughness in Chemically Amplified Photoresists

July 1, 2004
Author(s)
Ronald L. Jones, Vivek M. Prabhu, D M. Goldfarb, Eric K. Lin, Christopher L. Soles, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Wen-Li Wu, M Angelopoulos
A model bilayer geometry is used to examine fundamental contributions of in-situ reaction front profile width on resulting line edge roughness after development in standard 0.26 N tetramethyl ammonium hydroxide aqueous base developer. The bilayer geometry

Structure Characterization of Porous Interlevel Dielectric Films

June 21, 2004
Author(s)
Wen-Li Wu, Eric K. Lin, Christopher L. Soles
To extend the dielectric constant of interlevel dielectrics below a value of ~2.6 seen in today s IC chips, porous low-k material has been evaluated as a viable candidate by industries. In this paper, the current status and the future need in metrologies

Interfacial Effects on Moisture Absorption in Thin Polymer Films

June 1, 2004
Author(s)
B D. Vogt, Christopher L. Soles, Ronald L. Jones, C M. Wang, Eric K. Lin, Wen-Li Wu, Sushil K. Satija, D L. Goldfarb, M Angelopoulos
Moisture absorption in model photoresist films of poly(4-hydroxystryene) (PHOSt) and poly(tert-butoxycarboxystyrene) (PBOCSt) was measured by x-ray and neutron reflectivity. The degree of swelling in the films upon moisture exposure was found to be

X-Ray and Neutron Porosimetry as Powerful Methodologies for Determining Structural Characteristics of Porous Low-k Thin Films

June 1, 2004
Author(s)
Hae-Jeong Lee, B D. Vogt, Christopher L. Soles, Da-Wei Liu, Barry J. Bauer, Wen-Li Wu, Eric K. Lin, Gwi-Gwon Kang, Min-Jin Ko
Methylsilsesquioxane based porous low-k dielectric films with varying porogen loading have been characterized using X-ray and neutron porosimetry to determine their pore size distribution, average density, wall density, porosity, density profiles, and

Fundamentals of Developer-Resist Interactions for Line-Edge Roughness and Critical Dimension Control in Model 248 nm and 157 nm Photoresists

May 1, 2004
Author(s)
Vivek M. Prabhu, M Wang, E Jablonski, B D. Vogt, Eric K. Lin, Wen-Li Wu, D L. Goldfarb, M Angelopoulos, H Ito
Organic polar solvent (1-butanol) versus aqueous base (tetramethylammonium hydroxide, (TMAH)) development quality are distinguished by neutral versus charged polymer (polyelectrolyte) dissolution behavior of photoresist bilayers on silicon substrates

Surface Effects in Chemically Amplified Photoresists: Environmental Stability and Segregation

February 1, 2004
Author(s)
E Jablonski, Vivek M. Prabhu, S Sambasivan, Daniel A. Fischer, Eric K. Lin, D L. Goldfarb, M Angelopoulos, H Ito
It is well known that chemically amplified photoresists are sensitive to certain airborne molecular contaminants, notably amines, during post exposure delay, although the actual cause and specific failure mechanism are unknown. To assess the effect of low

Water Absorption in Thin Photoresist Films

February 1, 2004
Author(s)
B D. Vogt, Christopher L. Soles, Ronald L. Jones, Vivek M. Prabhu, Wen-Li Wu, Eric K. Lin
In this work, we quantify deviations in the moisture absorption into model photoresist films upon changing thickness. Both the thermodynamics and kinetics of the absorption process are examined. Water in the resist films has been shown to have a

Near Edge X-Ray Absorption Fine Structure Measurements of the Interface Between Bottom Anti-Reflective Coatings and a Model Deprotected Photoresist

December 1, 2003
Author(s)
E Jablonski, S Sambasivan, Daniel A. Fischer, Eric K. Lin, C Devadoss, R Puligadda
The interface between bottom anti-reflective coatings (BARCs) and a model deprotected photoresist, poly(4-hydroxystyrene) (PHS), was investigated using near edge x-ray absorption fine structure spectroscopy to identify mechanisms responsible for pattern