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Search Publications by: Kin (Charles) Cheung (Fed)

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Displaying 101 - 125 of 127

Compact and Distributed Modeling of Cryogenic Bulk MOSFET Operation

June 1, 2010
Author(s)
Akin Akturk, M. Holloway, S. Potbhare, David J. Gundlach, B Li, Neil Goldsman, M Peckerar, Kin P. Cheung
We have developed compact and physics-based distributed numerical models for cryogenic bulkMOSFET operation down to 20 K to advance simulation and first-pass design of device and circuit operation at low temperatures. To achieve this, we measured and

Frequency-Dependent Charge-Pumping: The Depth Question Revisited

May 1, 2010
Author(s)
Fan Zhang, Kin P. Cheung, Jason Campbell, John S. Suehle
A popular defect depth-profiling technique, frequency-dependent charge-pumping is carefully re-examined. Without complicated math of modeling, the physics behind the technique is examined clearly. It is shown that there is no unique relationship between

On the 60 mV/dec @300 K Limit for MOSFET Subthreshold Swing

April 26, 2010
Author(s)
Kin P. Cheung
The 60 mV/dec limit for subthreshold swing at 300K is generally considered a fundamental limit that cannot be defeated. The physical origin of this limit is revisited in this paper and the fact that this limit is in part determined by the density-ofstates

A Fast, Simple Wafer-level Hall-Mobility Measurement Technique

October 21, 2009
Author(s)
Liangchun (. Yu, Kin P. Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P. Campbell, Kuang Sheng
Mobility is a good indicator of device reliability. High channel mobility is one of the biggest challenges especially in novel devices such as high-k based MOSFET, III-V devices and SiC power MOSFET etc. Accurate measurement of channel mobility is required

An Improved Fast I d -V ^d g Measurement Technology With Expanded Application Range

October 19, 2009
Author(s)
Chen Wang, Liangchun (. Yu, Jason P. Campbell, Kin P. Cheung, Yi Xuan, Peide Ye, John S. Suehle, David Zhang
Fast Id-Vg measurements on very high performance devices (very low channel ON-resistance) and larger area devices (therefore large gate capacitance) are subject to serious distortions. Methods to minimize these distortions are introduced in this paper

Wafer-level Hall Measurement on SiC MOSFET

October 16, 2009
Author(s)
Liangchun (. Yu, Kin P. Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P. Campbell, John S. Suehle, Kuang Sheng
Low channel mobility is one of the biggest challenges to commercializing SiC MOSFETs. Accurate mobility measurement is essential for understanding the mechanisms that lead to low mobility. The most widely used effective mobility measurements overestimate

Large Random Telegraph Noise in Sub-Threshold Operation of Nano-Scale nMOSFETs

May 18, 2009
Author(s)
Jason P. Campbell, Liangchun (. Yu, Kin P. Cheung, Jin Qin, John S. Suehle, A Oates, Kuang Sheng
We utilize low-frequency noise measurements to examine the sub-threshold voltage (sub-VTH) operation of highly scaled devices. We find that the sub-VTH low-frequency noise is dominated by random telegraph noise (RTN). The RTN is exacerbated both by channel

The Negative Bias Temperature Instability vs. High-Field Stress Paradigm

May 18, 2009
Author(s)
Jason P. Campbell, Kin P. Cheung, John S. Suehle, A Oates
A new and more accurate fast-IDVG measurement methodology is utilized to examine the transient degradation and recovery associated with the negative-bias temperature instability (NBTI). The results reveal that the anomalously large initial degradations

Random Telegraph Noise in Highly Scaled nMOSFETs

April 26, 2009
Author(s)
Jason P. Campbell, Jin Qin, Kin P. Cheung, Liangchun (. Yu, John S. Suehle, A Oates, Kuang Sheng
Recently 1/f and random telegraph noise (RTN) studies have been used to infer information about bulk dielectric defects' spatial and energetic distributions. These analyses rely on a noise framework which involves charge exchange between the inversion

Channel Hot-Carrier Effect of 4H-SiC MOSFET

March 2, 2009
Author(s)
Liangchun (. Yu, Kin P. Cheung, John S. Suehle, Jason P. Campbell, Kuang Sheng, Aivars Lelis, Sei-Hyung Ryu
SiC MOSFET, as power device, can be expected to operate with high drain and high gate voltages, possibly leading to hot-carrier effect. However, hot-carrier degradation in a SiC MOSFET is difficult to detect because the as fabricated devices contain high

The Origins of Random Telegraph Noise in Highly Scaled SiON nMOSFETs

October 17, 2008
Author(s)
Jason P. Campbell, Jin Qin, Kin P. Cheung, Liangchun (. Yu, John S. Suehle, A Oates, Kuang Sheng
Random telegraph noise (RTN) has recently become an important issue in advanced circuit performance. It has also recently been used as a tool for gate dielectric defect profiling. In this work, we show that the widely accepted model thought to govern RTN

The transient behavior of NBTI - A new prospective

October 17, 2008
Author(s)
Kin P. Cheung, Jason P. Campbell
The Negative-Bias-Temperature-Instability (NBTI) is currently one of the most serious reliability issues in advanced CMOS technology. Specifically, the fast recovery of NBTI degradation immediately after stress is removed has recently become a hot topic

Oxide Reliability of SiC MOS Devices

October 12, 2008
Author(s)
Liangchun (. Yu, Kin P. Cheung, Jason P. Campbell, John S. Suehle, Kuang Sheng
Silicon carbide possesses excellent material properties for high temperature, high frequency and high power applications. Among all the device structures, MOSFET has advantages such as low gate leakage current, easier device control etc., and therefore

An Accurate Capacitance-Voltage Measurement Method for Highly Leaky Devices

September 1, 2008
Author(s)
Yun Wang, Kin P. Cheung, Y.J. Choi, Byoung Hun Lee
Accurate CV measurement becomes extremely difficult in advanced CMOS technology due to high level of leakage across the gate dielectric. Recently, a new Time-Domain-Reflectometry (TDR) based CV measurement method was introduced. This new method offers ease

New Insight into NBTI Transient Behavior Observed from Fast-GM Measurements

September 1, 2008
Author(s)
Jason P. Campbell, Kin P. Cheung, John S. Suehle
Fast-IDVG measurements have become an increasingly important tool to examine MOSFET transient degradation. The threshold voltage (VTH) extracted from fast-IDVG measurements is often used to infer the transient behavior of trapped charged in the gate

Negative-Bias Temperature Instability Induced Electron Trapping

July 21, 2008
Author(s)
Jason P. Campbell, Kin P. Cheung, John S. Suehle, A Oates
Despite four decades of research, the physics responsible for the negative bias temperature instability (NBTI) in p-channel metal-oxide-silicon field-effect-transistors is still unresolved. The current NBTI debate focuses on the dominance of either a hole

Electron Trapping: An Unexpected Mechanism of NBTI and Its Implications

June 17, 2008
Author(s)
Jason P. Campbell, Kin P. Cheung, John S. Suehle, A Oates
We utilize fast-IdVg measurements to examine NBTI recovery over a time scale of 2usecs to 1000 seconds. The extracted DVTH and %GM degradation data clearly demonstrates the presence of hole as well as electron trapping and detrapping. The hole and electron

The Challenge of Measuring Defects in Nanoscale Dielectrics

May 26, 2008
Author(s)
Kin P. Cheung, John S. Suehle
Defects in nanoscale gate dielectric of MOS devices can exchange charges with the substrate via quantum mechanical tunneling. This characteristic has been utilized in many measurement methods to measure the defects and its spatial distribution. In some