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Search Publications by: Pragya Shrestha (Fed)

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Displaying 1 - 25 of 92

High-endurance bulk CMOS one-transistor cryo-memory

February 28, 2025
Author(s)
Alexander Zaslavsky, Pragya Shrestha, Valery Ortiz Jimenez, Jason Campbell, Curt Richter
Previously we reported a compact one-transistor (1T) 180 nm bulk CMOS cryo-memory with a high 10^7 I_1/I_0 memory window and long 800 s retention time based on impact-ionization-induced charging of the transistor body. Here, we present the endurance and

A 4-mW 2.2-6.9 GHz LNA in 16nm FinFET Technology for Cryogenic Applications

December 9, 2024
Author(s)
Runzhou Chen, Hamdi Mani, Phil Marsh, Richard Al Hadi, Pragya Shrestha, Jason Campbell, Christopher Chen, Hao-Yu Chen, Kosmas Galatsis, Mau-Chung Frank Chang
This work presents the design and measurement of a low-power wide-band cryogenic low-noise amplifier (LNA) that operates in a wide temperature range using 16nm FinFET technology. The LNA is packaged and measured at both room and cryogenic temperatures. It

A Fully Integrated, Automatically Generated DC-DC Converter Maintaining > 75% Efficiency From 398 K Down to 23 K Across Wide Load Ranges in 12-nm FinFET

January 1, 2024
Author(s)
Anhang Li, Jeongsup Lee, Prashansa Mukim, Brian Hoskins, Pragya Shrestha, David Wentzloff, David Blaauw, Dennis Sylvester, Mehdi Saligane
This paper presents a fully integrated recursive successive-approximation switched capacitor (RSC) DC-DC converter implemented using an automatic cell-based layout generation in 12 nm FinFET technology. A novel design methodology is demonstrated based on

Characterization of Noise in CMOS Ring Oscillators at Cryogenic Temperatures

July 12, 2023
Author(s)
Prashansa Mukim, Pragya Shrestha, Advait Madhavan, Nitin Prasad, Jason Campbell, Forrest Brewer, Mark Stiles, Jabez J. McClelland
Allan deviation provides a means to characterize the time-dependence of noise in oscillators and potentially identify the source characteristics. Measurements on a 130nm, 7-stage ring oscillator show that the Allan deviation declines from 300K to 150K as

Ultrafast ID-VG Technique for Reliable Cryogenic Device Characterization

March 21, 2023
Author(s)
Pragya Shrestha, Akin Akturk, Brian Hoskins, Advait Madhavan, Jason Campbell
An in-depth understanding of the transient operation of devices at cryogenic temperatures remains experimentally elusive. However, the impact of these transients has recently become important in efforts to develop both electronics to support quantum

Resolving Complex Photoconductivity of Perovskite and Organic Semiconductor Films Using Phase-Sensitive Microwave Interferometry

March 2, 2023
Author(s)
Jasleen Bindra, Pragya Shrestha, Sebastian Engmann, Chad Cruz, Lea Nienhaus, Emily Bittle, Jason Campbell
Complex transient photoconductivity (Δσ) contains rich fingerprints of charge recombination dynamics in photoactive films. However, a direct measure of both real (Δσ′) and imaginary (Δσ″) components has proven difficult using conventional cavity-based time

Determination of Domain Wall Velocity and Nucleation Time by Switching Dynamics Studies of Ferroelectric Hafnium Zirconium Oxide

July 22, 2022
Author(s)
Xiao Lyu, Pragya Shrestha, Mengwei Si, Panni Wang, Junkang Li, Kin (Charles) Cheung, Yu Shimeng, Peide Ye
In this work, we present the first experimental determination of nucleation time and domain wall (DW) velocity by studying switching dynamics of ferroelectric (FE) hafnium zirconium oxide (HZO). Experimental data and simulation results were used to

Multi-bit per-cell 1T SiGe Floating Body RAM for Cache Memory in Cryogenic Computing

July 22, 2022
Author(s)
Pragya Shrestha, Jason Campbell, Wriddhi Chakraborty, A Gupta, R Saligram, S Spetalnick, A Raychowdhury, Suman Datta
Cryogenic computing requires high-density on-die cache memory with low latency, high bandwidth and energy-efficient access to increase cache hit and maximize processor performance. Here, we experimentally demonstrate, high-speed multi-bit memory operation

Impact ionization-induced bistability in CMOS transistors at cryogenic temperatures for capacitorless memory applications

July 29, 2021
Author(s)
Alexander Zaslavsky, Curt A. Richter, Pragya Shrestha, Brian Hoskins, Son Le, Advait Madhavan, Jabez J. McClelland
Cryogenic operation of complementary metal oxide semiconductor (CMOS) silicon transistors is crucial for quantum information science, but it brings deviations from standard transistor operation. Here we report on sharp current jumps and stable hysteretic

Dynamics studies of polarization switching in ferroelectric hafnium zirconium oxide

May 12, 2021
Author(s)
X. Lyu, M. Si, Pragya Shrestha, Kin (Charles) Cheung, P. D. Ye
In this paper, we review the ultrafast direct measurement on the transient ferroelectric polarization switching in hafnium zirconium oxide with crossbar metal-insulator-metal (MIM) structures including materials development, device fabrication, structure

Scalable microresonators for room-temperature detection of electron spin resonance from dilute, sub-nanoliter volume solids

October 28, 2020
Author(s)

Nandita S. Abhyankar, Amit K. Agrawal, Pragya R. Shrestha, Russell A. Maier, Robert D. McMichael, Jason P. Campbell, Veronika A. Szalai

Microresonators used for spin detection in volume-limited samples suffer from poor quality factors, which adversely affect sensitivity and ease of coupling to the microwave source. Here we adapt a metamaterial design with toroidal moment to confine

Record Fast Polarization Switching Observed in Ferroelectric Hafnium Oxide Crossbar Arrays

July 2, 2020
Author(s)
Pragya R. Shrestha, xiao Lyu, Mengwei Si, Jason P. Campbell, Kin P. Cheung, Peide Ye
The polarization switching speed of ferroelectric (FE) hafnium zirconium oxide (HZO) is studied with the device size down to sub-μm in lateral dimension. Ultrafast measurement of transient switching current on metal-ferroelectric-metal (MFM) device with a

Memory update characteristics of carbon nanotube memristors (NRAM) under circuitry-relevant operation conditions

June 30, 2020
Author(s)
Dmitry Veksler, gennadi bersuker, A W. Bushmaker, Maribeth Mason, Pragya Shrestha, Kin P. Cheung, Jason Campbell, T Rueckes, L Clevlend, H Luan, D C. Gilmer
Carbon nanotubes (CNT) resistance-change memory devices were assessed for neuromorphic applications under high frequency use conditions by employing the ultra-short (100 ps -10 ns) voltage pulse technique. Under properly selected operation conditions, CNTs