Mechanical Properties of Aluminum Nitride Substrates

Published

December 1, 1996

Author(s)

Jay S. Wallace, Lin-Sien H. Lum

Abstract

Aluminum nitride (AlN),because of its high thermal conductivity, is seeing increased use for heat management applications of semiconductor devices. With the likelihood of large mechanical stresses, both during fabrication as well as in service, mechanical properties become an important aspect of overall device reliability. The mechanical properties of three AlN compositions were characterized: one (high-fired) commercial grade material, one high-fired prototype material, and one prototype low-fired material. Mechanical property characterization included strength, Weibull parameters, toughness, and crack growth susceptibility. Properties of the commercial material were very consistent with a characteristic strength of 404 MPa, a Weibull modulus of 14, a fracture toughness of 3.6 Mpa m, and a crack growth susceptibility parameter of 125. In contrast, properties of the prototype materials were generally not as good and showed more variability. Phase analysis and microstructural characterization complemented the mechanical property measurements. The property variability appeared to be associated with second phase composition, surface contamination and inhomogeneities in the microstructure.

Citation

NIST Interagency/Internal Report (NISTIR) - NISTIR 5903

Report Number

NISTIR 5903

NIST Pub Series

NIST Interagency/Internal Report (NISTIR)

Pub Type

NIST Pubs

Download Paper

https://doi.org/10.6028/NIST.IR.5903

Local Download

Keywords

aluminum nitride, coaxial ring, dynamic fatigue, microstructure, reliability, ring-on-ring, strength, toughness, YAG

Citation

Wallace, J. and Lum, L. (1996), Mechanical Properties of Aluminum Nitride Substrates, NIST Interagency/Internal Report (NISTIR), National Institute of Standards and Technology, Gaithersburg, MD, [online], https://doi.org/10.6028/NIST.IR.5903, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=850249 (Accessed December 30, 2024)