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Detection limits of AI-based SEM dimensional metrology

Published

Author(s)

Peter Bajcsy, Brycie Wiseman, Michael Paul Majurski, Andras Vladar

Abstract

The speed of in-line scanning electron microscope (SEM) measurements of linewidth, contact hole, and overlay is critically important for identifying the measurement area and generating indispensable process control information. Sample charging and damage to sensitive IC structures require low primary electron beam current and dose. These demands inevitably result in noisy, low-contrast images, which (depending on the noise and contrast) can make traditional dimensional measurements no longer viable. Object segmentation based on artificial intelligence (AI) models can extend the viability of these measurements, but misleading, wrong results may occur due to so-called hallucinations. This work establishes a way to determine the limits of AI-based SEM dimensional metrology.
Proceedings Title
SPIE conference: Advanced Lithography + Patterning
Conference Dates
February 23-27, 2025
Conference Location
San Jose, CA, US
Conference Title
SPIE conference on Advanced Lithography + Patterning

Keywords

scanning electron microscopy, SEM, dimensional metrology, detection limits, AI model

Citation

Bajcsy, P. , Wiseman, B. , Majurski, M. and Vladar, A. (2025), Detection limits of AI-based SEM dimensional metrology, SPIE conference: Advanced Lithography + Patterning, San Jose, CA, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=958576 (Accessed April 10, 2025)

Issues

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Created March 14, 2025, Updated March 11, 2025