Sanabia, J.
, Goldie, S.
, Ratliff, L.
, Goldner, L.
and Gillaspy, J.
(2003),
Highly Charged Ion Bombardment of Silicon Surfaces, International Conference on the Application of Accelerators in Research and Industry|17th|Application of Accelerators in Research and Industry: Seventeenth International Conference on the Application of Accelerators in Research and Industry, Undefined
(Accessed October 31, 2024)
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Highly Charged Ion Bombardment of Silicon Surfaces
Published
Author(s)
J E. Sanabia, S N. Goldie, , ,
Abstract
Visible photoluminescence from Si (100) surfaces irradiated by highly-charged ions has recently been reported.1 This discovery has potential applications in silicon-based display technology and other opto-electronic devices and detectors. In an attempt to verify these results, highly charged ion-irradiated silicon samples were prepared at the Electron Beam Ion Trap facility at the National Institute of Standards and Technology. Two highly sensitive fluorescence detection schemes were employed, both using ultraviolet light while a spectrograph equipped with a liquid nitrogen-cooled charge-coupled device camera detected the fluorescence. The second detection scheme was a high throughput laser-scanning confocal microscope equipped with a photon-counting photomultiplier tube. We characterized the sensitivities in each detection scheme, allowing the assessment of the photoluminescence efficiency of Xe44+-Si (100). No photoluminescence was detected in either setup.Proceedings Title
International Conference on the Application of Accelerators in Research and Industry|17th|Application of Accelerators in Research and Industry: Seventeenth International Conference on the Application of Accelerators in Research and Industry
Volume
680
Conference Dates
November 12-16, 2002
Conference Location
Undefined
Conference Title
AIP Conference Proceedings
Pub Type
Conferences
Keywords
cross section, fluorescence, highly charged ion, photoluminescence, silicon
Citation
Issues
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Created July 31, 2003, Updated October 12, 2021