Buehler, M.
(1976),
Microelectronic test pattern NBS-3 for evaluating the resistivity-dopant density relationship of silicon:, , National Institute of Standards and Technology, Gaithersburg, MD, [online], https://doi.org/10.6028/NBS.SP.400-22
(Accessed December 26, 2024)
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Microelectronic test pattern NBS-3 for evaluating the resistivity-dopant density relationship of silicon:
Published
Author(s)
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- NBS SP 400-22
Report Number
NBS SP 400-22
Pub Type
NIST Pubs
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Created January 1, 1976, Updated May 19, 2023