U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications

NIST Authors in Bold

Displaying 351 - 375 of 718

X-Ray Micro-Beam Diffraction Determination of Full Stress Tensors in Cu TSVs

May 28, 2013
Author(s)
Chukwudi A. Okoro, Lyle E. Levine, Oleg A. Kirillov, Yaw S. Obeng, Ruqing Xu, Jonathan Z. Tischler, Wenjun Liu, Klaus Hummler
We report the first non-destructive, depth resolved determination of the full stress tensor in Cu through-silicon vias (TSVs), using synchrotron based micro-beam X-ray diffraction. Two adjacent Cu TSVs were studied; one deliberately capped with SiO2, the

Studies of photoconductivity and FET behavior in examining drift mobility, surface depletion, and transient effects in Si-doped GaN nanowires examined in vacuum and air

May 3, 2013
Author(s)
Norman A. Sanford, Lawrence H. Robins, Paul T. Blanchard, K. Soria, B. Klein, Kristine A. Bertness, John B. Schlager, Aric W. Sanders
Variable intensity photoconductivity (PC) performed under vacuum at 325 nm was used to estimate drift mobility and negative surface charge density sigma for c-axis oriented Si-doped GaN nanowires (NWs). In this approach we assumed that sigma was

Critical Dimension small angel X-ray scattering measurements of FinFET and 3D memory structures

April 8, 2013
Author(s)
Regis J. Kline, Daniel F. Sunday, Chengqing C. Wang, Wen-Li Wu, Charlie Settens, Bunday Benjamin, Brad Thiel, Matyi Richard
Critical dimension small angle X-ray scattering (CD-SAXS) has been identified as a potential solution for measurement of nanoscale lithographic features by interrogating structures with sub-nanometer wavelength radiation in transmission geometry. The most

Graphene as Transparent Electrode for Direct Observation of Hole Photoemission from Silicon to Oxide

March 27, 2013
Author(s)
Rusen Yan, Qin Zhang, Oleg A. Kirillov, Wei Li, James I. Basham, Alexander G. Boosalis, Xuelei X. Liang, Debdeep Jena, Curt A. Richter, Alan C. Seabaugh, David J. Gundlach, Huili G. Xing, Nhan V. Nguyen
The outstanding electrical and optical properties of graphene make it an excellent alternative as a transparent electrode. Here we demonstrate the application of graphene as collector material in internal photoemission (IPE) spectroscopy; enabling the

The Art in Science of microTAS (Editorial)

March 12, 2013
Author(s)
Michael Gaitan
The discovery of a natural phenomenon unveils a curtain of ignorance from what has always existed. However, the creation of art requires the use of materials and knowledge combined with artistic inspiration to create a work of aesthetic appeal. By this

Frequency-Modulated Charge Pumping: Defect Measurements with High Gate Leakage

February 28, 2013
Author(s)
Jason T. Ryan, Richard G. Southwick, Jason P. Campbell, Kin P. Cheung, John S. Suehle, Anthony Oates
Charge pumping is one of the most relied upon techniques used to quantify interface defects in metal-oxide-semiconductor devices. However, conventional charge pumping is easily hindered by excessive gate leakage currents which render the technique

Organosilicate Polymer E-Beam Resists with High Resolution, Sensitivity and Stability

February 28, 2013
Author(s)
Christopher Soles, Richard Kasica, Hae-Jeong Lee, Jae H. Sim, Sung-Il Lee, Ki-Bum Kim, Hyun-Mi Kim, Do Y. Yoon
Hydrogen silsesquioxane (HSQ) is an attractive electron-beam (e-beam) resist for sub-20 nm lithography due to its high resolution, excellent line-edge-roughness (LER), and good plasma etch resistance. However, the sensitivity and long-term stability of HSQ

Frequency Dependent Charge Pumping -- A Defect Depth Profiling Tool?

January 31, 2013
Author(s)
Jason T. Ryan, Richard G. Southwick, Jason P. Campbell, Kin P. Cheung, John S. Suehle
We investigate the validity of using frequency-dependent charge pumping (FD-CP) to determine bulk defect depth distributions. Using simple physical arguments we conclude that: (1) the effective tunneling length to a bulk defect can be very different than

Gallium Nitride Nanowires for On-Chip Optical Interconnects on Ex-Situ Substrates

January 16, 2013
Author(s)
Matthew D. Brubaker, Paul T. Blanchard, John B. Schlager, Aric W. Sanders, Alexana Roshko, Shannon M. Duff, Jason Gray, Victor M. Bright, Norman A. Sanford, Kristine A. Bertness
In this letter we report on the fabrication, device characteristics, and optical coupling of a two-nanowire device comprising light-emitting diode and photoconductive GaN nanowires. Axial p-n junction GaN nanowires were grown by molecular beam epitaxy

Band Offset Determination of Atomic-Layer-Deposited Al2O3 and HfO2 on InP by Internal Photoemission and Spectroscopic Ellipsometry

January 9, 2013
Author(s)
Kun Xu, Oleg A. Kirillov, David J. Gundlach, Nhan V. Nguyen, Pei D. Ye, Min Xu, Lin Dong, Hong Sio
Band offsets at the interfaces of n- and p-type InP ((100) and (111)A) and atomic-layer-deposited (ALD) Al2O3 were measured with internal photoemission and spectroscopic ellipsometry. Similarly, the band offsets at the interface of semi-insulating InP (100

Structure and Dynamics Studies of Concentrated Micrometer-Sized Colloidal Suspensions

January 7, 2013
Author(s)
Fan Zhang, Andrew J. Allen, Lyle E. Levine, Jan Ilavsky, Gabrielle G. Long
We present an experimental study of the structural and dynamical properties of concentrated suspensions of a series of different sized polystyrene microspheres dispersed in glycerol for volume fraction concentrations between 10 % and 20 %. The static

A Unique Photoemission Method to Measure Semiconductor Heterojunction Band Offsets

January 2, 2013
Author(s)
Qin Zhang, Rui Li, Rusen Yan, Thomas Kosel, Grace Xing, Alan Seabaugh, Kun Xu, Oleg A. Kirillov, David J. Gundlach, Curt A. Richter, Nhan V. Nguyen
We report a unique way to measure the energy band offset of a heterojunction by exploiting the light absorption profile in the heterojunction under visible-ultraviolet internal photoemission. This method was used to successfully determine the band

Self-aligned multi-channel silicon nanowire field-effect transistors

December 12, 2012
Author(s)
Hao Zhu, Qiliang Li, Hui Yuan, Helmut Baumgart, D. E. Ioannou, Curt A. Richter
Si nanowire field effect transistors (SiNW FETs) with multiple nanowire channels and different gate lengths have been fabricated by using a directed assembly approach combined with standard photolithographic process. The electrical characteristics of SiNW

EVALUATING METHODS OF SHIPPING THIN SILICON WAFERS FOR 3D STACKED APPLICATIONS

November 7, 2012
Author(s)
Richard A. Allen, Urmi Ray, Vidhya Ramachandran, Iqbal Ali, David T. Read, Andreas Fehk?hrer, J?rgen Burggraf
An experiment was performed to develop a method for choosing appropriate packaging for shipping 300 mm silicon wafers thinned to 100 µm or less for three-dimensional stacked integrated circuits (3DS-ICs). 3DS-ICs hold the promise of improved performance
Displaying 351 - 375 of 718