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Search Publications by: Andras E. Vladar (Fed)

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Displaying 1 - 25 of 185

INTERNATIONAL ROADMAP FOR DEVICES AND SYSTEMSTM 2023 EDITION METROLOGY

December 8, 2023
Author(s)
Elisabeth Mansfield, Bryan Barnes, R Joseph Kline, Andras E. Vladar, Yaw S. Obeng, Albert Davydov
The Metrology Chapter identifies emerging measurement challenges from devices, systems, and integration of new materials in the semiconductor industry and describes research and development pathways for meeting them. This includes but not limited to

Disinfection of Respirators with Ultraviolet Radiation

March 25, 2022
Author(s)
Dianne L. Poster, Matthew Hardwick, C Cameron Miller, Michael A. Riley, W. W. Shanaka I. Rodrigo, Andras E. Vladar, John D. Wright, Christopher D. Zangmeister, Clarence Zarobila, Jeremy Starkweather, John Wynne, Jason Yilzarde
Data for interpreting virus inactivation on N95 face filtering respirators (FFRs) by ultraviolet (UV) radiation are important in developing UV strategies for N95 FFR disinfection and reuse for any situation, whether it be everyday practices, contingency

Comparative study of multiwall carbon nanotube nanocomposites by Raman, SEM, and XPS measurement techniques

March 3, 2021
Author(s)
Yanmei Piao, Vipin Tondare, Chelsea S. Davis, Justin Gorham, Elijah Petersen, Jeffrey W. Gilman, Keana Scott, Andras Vladar, Angela R. Hight Walker
Substantial ongoing research efforts are investigating the production of novel composite material enhanced by the incorporation of nanomaterial fillers such as multiwall carbon nanotubes (MWCNTs). While the addition of MWCNTs have been shown to improve the

Probing Electrified Liquid-Solid Interfaces with Scanning Electron Microscopy

December 2, 2020
Author(s)
Hongxuan Guo, Alexander Yulaev, Evgheni Strelcov, Alexander Tselev, Christopher M. Arble, Andras Vladar, John S. Villarrubia, Andrei Kolmakov
The mean free path of secondary electrons in aqueous solutions is on the order of a nanometer, making them a suitable probe of ultrathin electrical double layers at solid-liquid electrolyte interfaces. Employing graphene as an electron-transparent

Validation of Single Particle ICP-MS for Routine Measurements of Nanoparticle Size and Number Size Distribution

November 25, 2018
Author(s)
Antonio R. Montoro Bustos, Premsagar P. Kavuri, Antonio M. Possolo, Natalia Farkas, Andras Vladar, Karen E. Murphy, Michael R. Winchester
Single particle inductively coupled plasma-mass spectrometry (spICP-MS) is an emerging technique capable of measuring nanoparticle size and number concentration simultaneously, of metal-containing nanoparticles (NPs) at environmentally relevant levels

Metrology for the next generation of semiconductor devices

October 12, 2018
Author(s)
Ndubuisi G. Orji, Mustafa Badaroglu, Bryan M. Barnes, Carlos Beitia, Benjamin D. Bunday, Umberto Celano, Regis J. Kline, Mark Neisser, Yaw S. Obeng, Andras Vladar
The semiconductor industry continues to produce ever smaller devices that are ever more complex in shape and contain ever more types of materials. The ultimate sizes and functionality of these new devices will be affected by fundamental and engineering

Nondestructive shape process monitoring of three-dimensional high aspect ratio targets using through-focus scanning optical microscopy Optical Microscopy

September 27, 2018
Author(s)
Ravikiran Attota, Hyeonggon Kang, Keana C. Scott, Richard A. Allen, Andras Vladar, Bunday Benjamin
Low-cost, high-throughput and nondestructive metrology of truly three-dimensional (3-D) targets for process control/monitoring is a critically needed enabling technology for high-volume manufacturing (HVM) of nano/micro technologies in multi-disciplinary

Research Update: Electron beam-based metrology after CMOS

July 19, 2018
Author(s)
James A. Liddle, Brian D. Hoskins, Andras Vladar, John S. Villarrubia
The strengths of and challenges facing electron-based metrology for post-CMOS technology are reviewed. Directed self-assembly, nanophotonics/plasmonics, and resistive switches and selectors, are examined as exemplars of important post-CMOS technologies

3D Nanometrology Based on SEM Stereophotogrammetry

September 18, 2017
Author(s)
Vipin N. Tondare, John S. Villarrubia, Andras Vladar
Three-dimensional (3D) reconstruction of a sample surface from scanning electron microscope (SEM) images taken at two perspectives has been known for decades. However, this method has not been widely used in the semiconductor industry for 3D measurements

Ionizing Radiation Processing and its Potential in Advancing Biorefining and Nanocellulose Composite Materials Manufacturing

September 1, 2017
Author(s)
Michael T. Postek, Dianne L. Poster, Andras Vladar, Mark S. Driscoll, Jay A. LaVerne, Zios Tsinas, Mohamad Al-Sheikhly
Nanocellulose is a high value material that has gained increasing attention because of its high strength, stiffness, unique photonic and piezoelectric properties, high stability and uniform structure. Through utilization of a biorefinery concept

Contour Metrology using Critical Dimension Atomic Force Microscopy

December 15, 2016
Author(s)
Ndubuisi G. Orji, Ronald G. Dixson, Boon Ping Ng, Andras Vladar, Michael T. Postek
The critical dimension atomic force microscope (CD-AFM) has been proposed as an instrument for contour measurement and verification – since its capabilities are complementary to the widely used scanning electron microscope (SEM). Although data from CD-AFM

Virtual rough samples to test 3D nanometer-scale SEM stereo photogrammetry

March 22, 2016
Author(s)
John S. Villarrubia, Vipin N. Tondare, Andras Vladar
The combination of SEM for high spatial resolution, images from multiple angles to provide 3D information, and commercially available stereo photogrammetry software for 3D reconstruction offers promise for dimensional metrology in 3D. A method is described

Optimizing Hybrid Metrology: Rigorous Implementation of Bayesian and Combined Regression.

November 12, 2015
Author(s)
Mark Alexander Henn, Richard M. Silver, John S. Villarrubia, Nien F. Zhang, Hui Zhou, Bryan M. Barnes, Andras Vladar, Bin Ming
Hybrid metrology, e.g. the combination of several measurement techniques to determine critical dimensions, is an important approach to meet the needs of semiconductor industry. A proper use of hybrid metrology may not only yield more reliable estimates for