Publications

Displaying 101 - 109 of 109

Arsenic Clustering and Precipitation Analysis in Ion-Implanted Si Wafers by X-Ray Absorption Spectroscopy and SIMS

September 1, 2000

Author(s)

M A. Sahiner, S W. Novak, Joseph Woicik, J Liu, V Krishnamoorty

EXAFS and SIMS have been used to obtain clustering and precipitation information in As (arsenic) implanted Si wavers. CZ (001) Siwafers were first implanted by As + at 100 keV to a dose of 1x10 15/cm 2 followed by a second As + implantation at 20-30 keV

Extended X-Ray Absorption Fine-Structure Measurement of Bond-Length Strain in Epitaxial Gd 2 0 3 on GaAs (001)

May 1, 2000

Author(s)

E J. Nelson, Joseph C. Woicik, M Hong, JP Mannaerts

Extended x-ray absorption fine structure (EXAFS) has been used to measure the bond length in a 23 epitaxial Gd 2O 3 film grown on GaAs(001). The Gd-O bond length is determined to be 2.390 0.013 or a bond-length strain of +2.7 0.6 % relative to the bond

Direct Measurement of Valence-Charge Asymmetry by X-Ray Standing Waves

January 1, 2000

Author(s)

Joseph C. Woicik, E Nelson, P Pianetta

By detecting valence-photoelectron under condition of strong x-ray Bragg reflection, we have determined that a majority of GaAs valence charge resides on the anion sites of this heteropolar crystal, in quantitative agreement with the Ga-As bond polarity as

Layer Perfection in Ultrathin InAS Quantum Wells in GaAs(001)

January 1, 2000

Author(s)

J A. Gupta, S P. Watkins, E D. Crozier, Joseph Woicik, D A. Harrison, D Jiang, I J. Pickering, B A. Karlin

X-ray diffraction (XRD), X-ray standing wave (XSW) and X-ray absorption fine structure (XAFS) measurements were used to assess the layer perfection and positions of 1 and 2 monolayer (ML) InAs quantum wells buried in GaAs(001). Photoluminescence (PL)

Atomic-Resolution Study of Lattice Distortion of a Buried InGa 1-x As Monolayers in GaAs(001)

November 1, 1999

Author(s)

T L. Lee, M Pillai, Joseph Woicik, G Labanda, P Lyman, S A. Barnett, Michael Bedzyk

X-ray standing wave measurements were used to study the strain in one monolayer of pseudobinary alloy InxGa1-xAs buried in GaAs(001). The measured In position along the [001] direction, which exhibits a linear dependence on the In concentration x, supports

Bond Lengths in Strained Semiconductor Alloys

May 1, 1999

Author(s)

Joseph C. Woicik

The bond lengths in a series of strained, buried Ga1-xInxAs thin-alloy films grown coherently on GaAs(001) and InP(001) substrates have been determined by high-resolution extended x-ray absorption fine-structure and diffraction anomalous fine-structure

Reliability of Structural Parameters Determined from DAFS Data Using the Iterative Dispersion Integral Algorithm

May 1, 1999

Author(s)

J O. Cross, W Elam, Joseph Woicik, L B. Sorensen

The iterative Kramers-Kronig (IKK) dipersion integral lgorithm is commonly used to isolate the complex resonant scattering amplitude δf= f' + if from measured diffraction anomalous fine structure (DAFS) intensity data, where the imaginary part f is

Diffraction Anomalous Fine Structure Study of Strained GA 1-x In x As on GaAs(001)

August 20, 1998

Author(s)

Joseph C. Woicik, J O. Cross, Charles E. Bouldin, Bruce D. Ravel, J G. Pellegrino, B W. Steiner, S G. Bompadre, L B. Sorensen, K E. Miyano, J P. Kirkland

Diffraction anomalous fine-structure measurements performed at both the Ga and As K edges have determined the Ga-As bond length to be 2.442 ± 0.005 {Angstrom} in a buried, 213 {Angstrom} thick Ga^0.78^In 0.22As layer grown coherently on GaAs(001). This

Bond-Length Strain in Buried Ga 1-x In x As Thin-Alloy Films Grown Coherently on InP(001)

August 16, 1998

Author(s)

Joseph C. Woicik, J A. Gupta, S P. Watkins, E D. Crozier

The bond-length strain in a series of strained, buried Ga 1-xIn xAs thin-alloy films grown coherently on InP(001) has been determined by high-resolution extended x-ray absorption fine-structure measurements. Comparison with a random-cluster calculation

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