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Search Publications by: James G. Kushmerick (Fed)

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Displaying 1 - 25 of 33

Utilizing Nearest-Neighbor Interactions to Alter Charge Transport Mechanisms in Molecular Assemblies of Porphyrins on Surfaces

May 27, 2015
Author(s)
James G. Kushmerick, Amanda E. Schuckman, Lisa M. Perez, Mikki Vinodu, Joao Tome, Lam H. Yu, Charles M. Drain, James D. Batteas
When tunneling is the dominant mechanism of charge transport in a molecular junction, the conductivity of the junction is largely insensitive to chemical and structural perturbations which do not impact the overall length of the junction. This severely

Influence of substrate on crystallization in polythiophene/fullerene blends

January 13, 2011
Author(s)
Lee J. Richter, Christine He, David Germack, R Joseph Kline, Dean DeLongchamp, Daniel A. Fischer, Chad R. Snyder, James G. Kushmerick
The nanoscale morphology of the active layer in organic, bulk heterojunction (BHJ) solar cells is crucial to device performance. Often a combination of casting conditions and post deposition thermal treatment are used to optimize the morphology. In general

Investigation of Gd3N@C2n family by Raman and inelastic electron tunneling spectroscopy

March 15, 2010
Author(s)
James G. Kushmerick, Brian G. Burke, Tsz-Wah Chan, Keith A. Williams, Jiechao Ge, Chunying Shu, Wujun Fu, Harry C. Dorn, Alexander Puretzky, David B. Geohegan
The structure and vibrational spectrum of Gd3N@C80 is studied through Raman and inelastic electron tunneling spectroscopy (IETS) as well as density functional theory (DFT) and universal force field (UFF) calculations. Hindered rotations, shown by both

Molecular transistors scrutinized

December 23, 2009
Author(s)
James G. Kushmerick
Transistors have been made from single molecules, where the flow of electrons is controlled by modulating the energy of the molecular orbitals. Insight from such systems could aid the development of future electronic devices.

Surface Potential Imaging of Solution Processable Acene-Based Thin Film Transistors

December 2, 2008
Author(s)
Lucile C. Teague, Behrang H. Hamadani, John E. Anthony, David J. Gundlach, James G. Kushmerick, Sanker Subramanian, Thomas Jackson, Curt A. Richter, Oana Jurchescu
We report scanning Kelvin probe microscopy (SKPM) of electrically biased difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic thin film transistors. SKPM reveals the relationship between the diF-TESADT film structure and device

Nanoscale Switch Elements From Self-Assembled Monolayers on Silver

October 16, 2008
Author(s)
J M. Beebe, James G. Kushmerick
Au/molecule/Ag junctions are shown to behave as voltage-controlled two-state switches. In the open state, the current-voltage behavior is consistent with a metal-molecule-metal tunnel junction. At a negative bias threshold, silver filaments bridge the gap

Origin of Discrepancies in Inelastic Electron Tunneling Spectra ofMolecular Junctions

October 16, 2008
Author(s)
Lam H. Yu, Christopher D. Zangmeister, James G. Kushmerick
We report inelastic electron tunneling spectroscopy (IETS) of multilayer molecular junctions with and without incorporated metal nano-particles. The incorporation of metal nanoparticles into our devices leads to enhanced IET intensity and a modified line

Molecule induced interface states dominate charge transport in Si-alkyl-metal junctions

August 26, 2008
Author(s)
Lam H. Yu, Nadine E. Gergel-Hackett, Christopher D. Zangmeister, Christina A. Hacker, Curt A. Richter, James G. Kushmerick
Abstract. Semiconductor-molecule-metal junctions consisting of alkanethiol mono- layers self-assembled on both p+ and n¡ type highly doped Si(111)wires contacted with a 10 ¹m Au wire in a crossed-wire geometry are examined. Low temperature transport