U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by: Jason Campbell (Fed)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 1 - 25 of 229

High-endurance bulk CMOS one-transistor cryo-memory

February 28, 2025
Author(s)
Alexander Zaslavsky, Pragya Shrestha, Valery Ortiz Jimenez, Jason Campbell, Curt Richter
Previously we reported a compact one-transistor (1T) 180 nm bulk CMOS cryo-memory with a high 10^7 I_1/I_0 memory window and long 800 s retention time based on impact-ionization-induced charging of the transistor body. Here, we present the endurance and

A 4-mW 2.2-6.9 GHz LNA in 16nm FinFET Technology for Cryogenic Applications

December 9, 2024
Author(s)
Runzhou Chen, Hamdi Mani, Phil Marsh, Richard Al Hadi, Pragya Shrestha, Jason Campbell, Christopher Chen, Hao-Yu Chen, Kosmas Galatsis, Mau-Chung Frank Chang
This work presents the design and measurement of a low-power wide-band cryogenic low-noise amplifier (LNA) that operates in a wide temperature range using 16nm FinFET technology. The LNA is packaged and measured at both room and cryogenic temperatures. It

Characterization of Noise in CMOS Ring Oscillators at Cryogenic Temperatures

July 12, 2023
Author(s)
Prashansa Mukim, Pragya Shrestha, Advait Madhavan, Nitin Prasad, Jason Campbell, Forrest Brewer, Mark Stiles, Jabez J. McClelland
Allan deviation provides a means to characterize the time-dependence of noise in oscillators and potentially identify the source characteristics. Measurements on a 130nm, 7-stage ring oscillator show that the Allan deviation declines from 300K to 150K as

Ultrafast ID-VG Technique for Reliable Cryogenic Device Characterization

March 21, 2023
Author(s)
Pragya Shrestha, Akin Akturk, Brian Hoskins, Advait Madhavan, Jason Campbell
An in-depth understanding of the transient operation of devices at cryogenic temperatures remains experimentally elusive. However, the impact of these transients has recently become important in efforts to develop both electronics to support quantum

Resolving Complex Photoconductivity of Perovskite and Organic Semiconductor Films Using Phase-Sensitive Microwave Interferometry

March 2, 2023
Author(s)
Jasleen Bindra, Pragya Shrestha, Sebastian Engmann, Chad Cruz, Lea Nienhaus, Emily Bittle, Jason Campbell
Complex transient photoconductivity (Δσ) contains rich fingerprints of charge recombination dynamics in photoactive films. However, a direct measure of both real (Δσ′) and imaginary (Δσ″) components has proven difficult using conventional cavity-based time

Multi-bit per-cell 1T SiGe Floating Body RAM for Cache Memory in Cryogenic Computing

July 22, 2022
Author(s)
Pragya Shrestha, Jason Campbell, Wriddhi Chakraborty, A Gupta, R Saligram, S Spetalnick, A Raychowdhury, Suman Datta
Cryogenic computing requires high-density on-die cache memory with low latency, high bandwidth and energy-efficient access to increase cache hit and maximize processor performance. Here, we experimentally demonstrate, high-speed multi-bit memory operation

Scalable microresonators for room-temperature detection of electron spin resonance from dilute, sub-nanoliter volume solids

October 28, 2020
Author(s)

Nandita S. Abhyankar, Amit K. Agrawal, Pragya R. Shrestha, Russell A. Maier, Robert D. McMichael, Jason P. Campbell, Veronika A. Szalai

Microresonators used for spin detection in volume-limited samples suffer from poor quality factors, which adversely affect sensitivity and ease of coupling to the microwave source. Here we adapt a metamaterial design with toroidal moment to confine

Record Fast Polarization Switching Observed in Ferroelectric Hafnium Oxide Crossbar Arrays

July 2, 2020
Author(s)
Pragya R. Shrestha, xiao Lyu, Mengwei Si, Jason P. Campbell, Kin P. Cheung, Peide Ye
The polarization switching speed of ferroelectric (FE) hafnium zirconium oxide (HZO) is studied with the device size down to sub-μm in lateral dimension. Ultrafast measurement of transient switching current on metal-ferroelectric-metal (MFM) device with a

Memory update characteristics of carbon nanotube memristors (NRAM) under circuitry-relevant operation conditions

June 30, 2020
Author(s)
Dmitry Veksler, gennadi bersuker, A W. Bushmaker, Maribeth Mason, Pragya Shrestha, Kin P. Cheung, Jason Campbell, T Rueckes, L Clevlend, H Luan, D C. Gilmer
Carbon nanotubes (CNT) resistance-change memory devices were assessed for neuromorphic applications under high frequency use conditions by employing the ultra-short (100 ps -10 ns) voltage pulse technique. Under properly selected operation conditions, CNTs

Nanoscale MOSFET as a potential Room-Temperature Quantum Current Source

March 31, 2020
Author(s)
Kin P. Cheung, Jason P. Campbell
Nanoscale metal-oxide-semiconductor field-effect-transistors (MOSFETs) with only one defect at the interface can potentially become a single electron turnstile linking frequency and electronic charge to realize the elusive quantized current source. Charge

Nonresonant transmission line probe for sensitive interferometric electron spin resonance detection

August 5, 2019
Author(s)
Pragya R. Shrestha, Nandita S. Abhyankar, Mark A. Anders, Kin P. Cheung, Robert M. Gougelet, Jason T. Ryan, Veronika A. Szalai, Jason P. Campbell
Electron spin resonance (ESR) spectroscopy measures paramagnetic free radicals, or electron spins, in a variety of biological, chemical, and physical systems. Detection of diverse paramagnetic species is important in applications ranging from quantum

Switching variability factors in compliance-free metal oxide RRAM

March 31, 2019
Author(s)
Dmitry Veksler, Gennadi Bersuker, A W. Bushmaker, Pragya Shrestha, Kin P. Cheung, Jason Campbell
Switching variability in polycrystalline compliance-free HfO2-based 1R RRAM is evaluated employing ultra-fast low voltage pulse approach. Changes in filament conductivity are linked to the variations of energy released in a switching process. This study