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Search Publications by: Jason Ryan (Fed)

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Displaying 76 - 100 of 124

Accurate Fast Capacitance Measurements for Reliable Device Characterization

July 1, 2014
Author(s)
Pragya R. Shrestha, Kin P. Cheung, Jason P. Campbell, Jason T. Ryan, Helmut Baumgart
As device dimensions continue to scale, transient phenomena are becoming increasingly more important to understand for both performance and reliability considerations. Recently, fast capacitances versus voltage (CV) measurements have been gaining attention

Circuit Speed Timing Jitter Increase in Random Logic Operation after NBTI Stress

June 1, 2014
Author(s)
Guangfan Jiao, Jiwu Lu, Jason Campbell, Jason Ryan, Kin P. Cheung, Chadwin D. Young, Gennadi Bersuker
Recently, much effort has been spent trying to relate NBTI observations to real circuit impacts. While many of these efforts rely on circuit simulation to bridge this gap, an experimental approach is, of course, preferred. In this study we provide this

Constant Shape Factor Frequency Modulated Charge Pumping (FMCP)

March 3, 2014
Author(s)
Jason T. Ryan, Jason P. Campbell, Jibin Zou, Kin P. Cheung, Richard Southwick, Anthony Oates, Rue Huang
Abstract— We examine the seemingly frequency-dependent gate leakage current component of frequency-modulated charge pumping and show it to be a measurement artifact. If untreated, this results in erroneous defect density extractions. We present a constant

Fast-Capacitance for Advanced Device Characterization

March 3, 2014
Author(s)
Pragya R. Shrestha, Kin P. Cheung, Jason T. Ryan, Jason P. Campbell, Helmut Baumgart
Fast-CV measurements are frequently being used to study transient phenomena associated with advanced devices. In this study, we show that many artifacts plague this measurement and then provide a proper method to legitimize fast-CV measurements as

Reliability Monitoring For Highly Leaky Devices

May 31, 2013
Author(s)
Jason T. Ryan, Jason P. Campbell, Kin P. Cheung, John S. Suehle, Richard Southwick, Anthony Oates
We demonstrate a new charge pumping (CP) methodology, frequency modulated CP (FMCP), that robustly treats metrology challenges associated with high gate leakage current. By moving to an AC coupled measurement, we are able to easily resolve small CP signals

Frequency-Modulated Charge Pumping: Defect Measurements with High Gate Leakage

February 28, 2013
Author(s)
Jason T. Ryan, Richard G. Southwick, Jason P. Campbell, Kin P. Cheung, John S. Suehle, Anthony Oates
Charge pumping is one of the most relied upon techniques used to quantify interface defects in metal-oxide-semiconductor devices. However, conventional charge pumping is easily hindered by excessive gate leakage currents which render the technique

Frequency Dependent Charge Pumping -- A Defect Depth Profiling Tool?

January 31, 2013
Author(s)
Jason T. Ryan, Richard G. Southwick, Jason P. Campbell, Kin P. Cheung, John S. Suehle
We investigate the validity of using frequency-dependent charge pumping (FD-CP) to determine bulk defect depth distributions. Using simple physical arguments we conclude that: (1) the effective tunneling length to a bulk defect can be very different than

SERIES RESISTANCE: A MONITOR FOR HOT CARRIER STRESS

January 31, 2013
Author(s)
Jason P. Campbell, Serghei Drozdov, Kin P. Cheung, Richard G. Southwick, Jason T. Ryan, John S. Suehle, Anthony Oates
In this work, we examine a series resistance extraction technique which yields accurate values from single nano-scale devices. The series resistance values, derived from this extraction technique, are shown to be sensitive to hot carrier degradation and

On the Contribution of Bulk Defects on Charge Pumping Current

October 1, 2012
Author(s)
Jason T. Ryan, Richard G. Southwick, Jason P. Campbell, Kin P. Cheung, John S. Suehle
Frequency dependent charge pumping (FD-CP) has emerged as a popular technique for studying the spatial and energetic distribution of defect centers in advanced high-k gate stacks. However, conflicting interpretations of the charge pumping frequency -

Physical Model for Random Telegraph Noise Amplitudes and Implications

June 12, 2012
Author(s)
Richard G. Southwick, Kin P. Cheung, Jason P. Campbell, Serghei Drozdov, Jason T. Ryan, John S. Suehle, Anthony Oates
Random Telegraph Noise (RTN) has been shown to surpass random dopant fluctuations as a cause for decananometer device variability, through the measurement of a large number of ultra-scaled devices [1]. The most worrisome aspect of RTN is the tail of the

Channel Length-Dependent Series Resistance?

June 10, 2012
Author(s)
Jason P. Campbell, Kin P. Cheung, Serghei Drozdov, Richard G. Southwick, Jason T. Ryan, Tony Oates, John S. Suehle
A recently developed series resistance (RSD) extraction procedure from a single nanoscale device is shown to be highly robust. Despite these virtues, the technique unexpectedly results in a channel length-dependent RSD which is observed across a wide range