Tighe, N.
, Kuroda, K.
, Mitchell, T.
and Heuer, A.
(1980),
In Situ oxidation of Y?O?-doped Si?N?:, , National Institute of Standards and Technology, Gaithersburg, MD, [online], https://doi.org/10.6028/NBS.IR.80-2075
(Accessed January 2, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
In Situ oxidation of Y?O?-doped Si?N?:
Published
Author(s)
, , ,
Citation
- NBS IR 80-2075
Report Number
NBS IR 80-2075
Pub Type
NIST Pubs
Download Paper
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created January 1, 1980, Updated May 19, 2023