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Search Publications by: Albert Davydov ()

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Displaying 126 - 150 of 172

Electrolyte stability determines scaling limits for solid-state 3D Li-ion batteries

December 20, 2011
Author(s)
Dmitry A. Ruzmetov, Vladimir P. Oleshko, Paul M. Haney, Henri J. Lezec, K Karki, K Baloch, Amit K. Agrawal, Albert Davydov, Sergiy Krylyuk, Y Liu, JY Huang, Mihaela M. Tanase, John Cumings, Albert A. Talin
Rechargeable, all-solid state Li-ion batteries (LIBs) with high specific capacity and small footprint are highly desirable to power an emerging class of miniature, autonomous microsystems that operate without a hardwire for power or communications. A

Homoepitaxial n-core: p-shell gallium nitride nanowires: HVPE overgrowth growth on MBE nanowires

October 25, 2011
Author(s)
Aric Sanders, Paul T. Blanchard, Kristine A. Bertness, Matthew D. Brubaker, Ann Chiaramonti Debay, Christopher M. Dodson, Todd E. Harvey, Andrew M. Herrero, Devin M. Rourke, John B. Schlager, Norman Sanford, Albert Davydov, Abhishek Motayed, Denis Tsvetkov
We present the homoepitaxial growth of p-type, magnesium-doped gallium nitride shells using halide vapor phase epitaxy on n-type gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy. Scanning electron microscopy shows clear dopant

Abstract of the presentation: Position- and polarization- resolved microphotoluminescence of GaN/AlGaN core-shell nanowires

October 17, 2011
Author(s)
Albert Davydov, G. Jacopin, S. Bellei, Denis Tsvetkov, Kristine A. Bertness, L. Rigutti, Norman A. Sanford, John B. Schlager, M. Tchernycheva, F. H. Julien
Over the past decade, core-shell nanowires (NWs) have been intensively used as the building blocks of novel optoelectronic devices as solar cells [1], LEds [2], naolasers [3]. Indeed, this geometry not only allows to passivate surface states, but also

Effect of AlN Buffer Layer Properties on the Morphology and Polarity of GaN Nanowires Grown by Molecular Beam Epitaxy

September 8, 2011
Author(s)
Matthew D. Brubaker, Kristine A. Bertness, Norman A. Sanford, Albert Davydov, Igor Levin, Devin M. Rourke, Victor M. Bright
Low temperature AlN buffer layers grown by plasma-assisted Molecular Beam Epitaxy (MBE) on Si (111) were found to significantly affect the subsequent growth morphology of GaN nanowires. The AlN buffer layers exhibited nanowire-like columnar protrusions

GaN Nanowires Grown by Molecular Beam Epitaxy

August 1, 2011
Author(s)
Kristine A. Bertness, Norman A. Sanford, Albert Davydov
The unique properties of GaN nanowires grown by molecular beam epitaxy are reviewed. These properties include the absence of residual strain, exclusion of most extended defects, long photoluminescence lifetime, low surface recombination velocity,and high

Highly Selective GaN-nanowire/TiO2-nanocluser Hybrid Sensors for Detection of Benzene and Related Environment Pollutants

July 22, 2011
Author(s)
Geetha G. Aluri, Abhishek Motayed, Albert Davydov, Vladimir Oleshko, Kristine A. Bertness, Norman Sanford
Nanowire-nanocluster hybrid chemical sensors were realized by functionalizing gallium nitride (GaN) nanowires with titanium dioxide (TiO2) nanoclusters for selectively sensing benzene and other related aromatic compounds. Hybrid sensor devices were

GaN nanowires grown by molecular beam epitaxy

July 1, 2011
Author(s)
Kristine A. Bertness, Norman A. Sanford, Albert Davydov
The unique properties of GaN nanowires grown by molecular beam epitaxy are reviewed. These properties include defect-free growth mode with no residual strain, long photoluminescence lifetime, low surface recombination velocity and high mechanical quality

Tapering Control of Si Nanowires Grown from SiCl4 at Reduced Pressure

December 15, 2010
Author(s)
Sergiy Krylyuk, Albert Davydov, Igor Levin
Device applications of tapered Si nanowire (SiNW) arrays require reliable technological approaches for fabricating nanowires with controlled shape and orientation. In this study, we systematically explore effects of growth conditions on tapering of Si

Compressive stress effect on the radial elastic modulus of oxidized Si nanowires

March 23, 2010
Author(s)
Gheorghe Stan, Sergiy Krylyuk, Albert Davydov, Robert F. Cook
Detailed understanding and optimal control of the properties of Si nanowires are essential steps in developing Si nanoscale circuitry. In this work, we have investigated mechanical properties of as-grown and oxidized Si nanowires as a function of their

Diameter Dependent Transport Properties of GaN Nanowire Field Effect Transistors

October 16, 2008
Author(s)
Abhishek Motayed, Mark D. Vaudin, Albert Davydov, John Meingailis, Maoqi He, S N. Mohammad
We report transport properties measurements of individual GaN nanowire field effect transistors and the correlation of the electron mobilities with the existence of grain boundaries in these nanowires. These nanowires are grown by direct reaction of NH3

Thermally Stable Ge/Cu/Ti Ohmic Contacts to n-type GaN

October 16, 2008
Author(s)
Nadin Mahadik, M V. Rao, Albert Davydov
he performance of novel Ge/Cu/Ti metallization scheme on n-type GaN has been investigated for obtaining thermally and electrically stable low resistance ohmic contacts. Isochronal (2 min) anneals in the 600 degrees C to 740 degrees C temperature range and

Thermodynamic Assessment of the Co-Mo System

October 16, 2008
Author(s)
Albert Davydov, Ursula R. Kattner
The experimental thermochemical and phase diagram data for the Co-Mo system were assessed. A consistent thermodynamic description, using a Redlich-Kister model for the solution phases and sublattice and line compound models for the intermetallics, was

Surface Effects on the Elastic Modulus of Te Nanowires

June 17, 2008
Author(s)
Gheorghe Stan, Sergiy Krylyuk, Albert Davydov, Mark D. Vaudin, Leonid A. Bendersky, Robert F. Cook
Nondestructive elastic property measurements have been performed on Te nanowires with diameters in the range 20 150 nm. By using contact resonance atomic force microscopy, the elastic indentation modulus perpendicular to the prismatic facets of the

The relationship between local order, long range order, and sub-bandgap defects in hafnium oxide and hafnium silicate films

May 9, 2008
Author(s)
D. H. Hill, Robert A. Bartynski, Nhan Van Nguyen, Albert Davydov, Deane Chandler-Horowitz, Martin M. Frank
We have measured X-ray absorption spectra (XAS) at the oxygen K-edge for hafnium oxide (HfO2) films grown by chemical vapor deposition (CVD) and atomic layer deposition (ALD), as well as hafnium silicate (HfSiO) films grown by CVD.  The XAS results are

Growth of Silicon Carbide Nanowires by a Microwave Heating-Assisted Physical Vapor Transport Using Group VIII Metal Catalysts

November 13, 2007
Author(s)
Siddarth Sundaresan, Albert Davydov, Mark D. Vaudin, Igor Levin, James E. Maslar, Yong-lai Tian, M V. Rao
SiC nanowires are grown by a novel catalyst-assisted sublimation-sandwich (SS) method. This involves microwave heating-assisted physical vapor transport from a source 4H-SiC wafer to a closely positioned substrate 4H-SiC wafer. The substrate wafer is

A Brighter Future From Gallium Nitride Nanowires

October 1, 2006
Author(s)
Kristine A. Bertness, Norman Sanford, Albert Davydov
How might nitride semiconductor nanowires change the future of computing? In the spirit of this special issue on how science fiction might become working technology, we offer some speculations and explain the science behind them. This article focuses on

Molecular Beam Epitaxial Growth of High-Quality GaN Nanocolumns

January 5, 2006
Author(s)
J E. Van Nostrand, J. E. Averett, R Cortez, J. Boeckl, C Stutz, Norman Sanford, Albert Davydov, M M. Maska
Vertically oriented gallium nitride GaN nanocolumns (NCs) approximately 90±10 nm wide and 0.75 microns tall were grown by plasma-assisted molecular beam epitaxy on Al_(2)O_(3)(0001) and Si(111). The dense packing of the NCs gives them the appearance of a

Catalyst-Free Growth of GaN Nanowires

January 1, 2006
Author(s)
Kristine A. Bertness, Norman Sanford, Joy Barker, John B. Schlager, Alexana Roshko, Albert Davydov, Igor Levin
We have grown GaN and AlGaN nanowires on Si (111) substrates with gassource molecular beam epitaxy (MBE). No metal catalysts were used. The nanowires displayed a number of interesting materials properties, including room-temperature luminescence intensity