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PUBLICATIONS

X-ray computed tomography flaw phantom development: stepper photolithography and deep reactive ion etching: Fabrication and reference measurements

Published

Author(s)

Felix Kim, Sarah Robinson, Nikolai Klimov, John Henry J. Scott

Abstract

Stepper photolithography combined with deep reactive ion etching was used to generate controlled flaws to assess X-ray computed tomography (XCT) flaw detectability. Holes ranging in sizes from a few micrometers to hundreds of micrometer level were generated. Various shapes and distribution patterns of holes were demonstrated. Capabilities to generate simple cylindrical holes to more complex cavities with scalloping surfaces representative of metal additive manufacturing lack-of-fusion pores were also demonstrated. Silicon direct bonding method was demonstrated to encapsulate the generated holes into pores. Scanning electron microscopic images were acquired to assess the manufacturing quality and to calibrate the flaw sizes. Reference measurement processes and results are discussed.
Citation
Advanced Manufacturing Series (NIST AMS) - 100-63
Report Number
100-63
NIST Pub Series
Advanced Manufacturing Series (NIST AMS)
Pub Type
NIST Pubs

Download Paper

https://doi.org/10.6028/NIST.AMS.100-63
Local Download

Keywords

x-ray computed tomography, artifact, phantom, defect, flaw, probability of detection, additive manufacturing.
Uncertainty quantification, Reference materials, Quality assurance, Nanofabrication / manufacturing, Lithography, Image and signal processing, Dimensional metrology and Additive manufacturing

Citation

Kim, F. , Robinson, S. , Klimov, N. and Scott, J. (2025), X-ray computed tomography flaw phantom development: stepper photolithography and deep reactive ion etching: Fabrication and reference measurements, Advanced Manufacturing Series (NIST AMS), National Institute of Standards and Technology, Gaithersburg, MD, [online], https://doi.org/10.6028/NIST.AMS.100-63, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=958491 (Accessed February 21, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created February 18, 2025